发光管

  • 网络led;SMD;SMD LED
发光管发光管
  1. InGaAsP/InP边发光管特性的研究

    Study of characteristics in the ingaasp / inp edge-emitting led 's

  2. GaInAsP/InP双异质结发光管材料的研究

    The study of gainasp / inp double heterojunction LED material

  3. 超辐射发光管端面AR膜的设计与制备

    Design and fabrication of AR film for super-luminescent diode facets

  4. 光电传感器由发光管(LED)和光敏管(PT)组成,用于识别选票上的信息符号。

    Photoelectric sensor which identify the information symbol of votes is composed of LED and PT .

  5. GaAs红外发光管芯片的表面性质

    Surface Properties of GaAs IR LED Chips

  6. 提高InGaAsP/InPDH面发光管输出光功率的研究

    Investigation of light power output increase of InGaAsP-InP DH surface LEDs

  7. 高亮度GaAlAs红色发光管设计中的几个问题

    Some Problems in the Design of Red GaAlAs LED with High Brightness

  8. 在光学系统中,采用了高性能的LED发光管组成的阵列光源,采用了折反式光路,减小仪器体积。

    In optical system , several high-powered LED was employed as array lighting source , the optical route is designed as pulldown type , so the size of instrument can be reduced .

  9. GaN基发光管在节约能源方面有着巨大的应用前景,而使用GaN基半导体光子探测器代替真空管进行紫外探测,也有其重大的应用背景。

    GaN-based light emitting devices have a great prospect in saving energy . GaN-based semiconductor photodetectors will take the place of vacuum tube devices in ultraviolet detection area .

  10. 根据本文提出的探纬检测方法设计探纬器和探纬器信号处理电路,在探纬器设计中选用红外发光管,用脉冲信号进行驱动,光电管选用PIN型硅光电二极管。

    According to the weft detection method proposed by the paper , designed signal processing circuit and feeler , LED was driven with the pulsed signal , photoelectric silicon PIN photodiode is used .

  11. 论文以红绿蓝三种颜色LED发光管所发出的光为三原色,以颜色相加原理为理论基础,以CIE色度系统为应用基础,论述了三原色配色的计算,确定了三原色的配色比例;

    The paper dissertates the calculation of color matching with tricolor based on the color mixing theory and CIE chromaticity system and makes the light of red , green and blue LED be the tricolor .

  12. GaAlAs快速边发光管发射端面沉积Al2O3抗反射层的研究较详细地研究了工艺参量H2O/TEOS摩尔比对薄膜结构和性能的影响。

    INVESTIGATION OF A1_2O_3 ANTIREFLECTIVE COATING FOR GaAlAs HIGH SPEED LEDs The dependence of the H 2O / TEOS molar ratio on the structure and performance of the SiO 2 antireflective coating was studied in detail .

  13. 氮化镓(GaN)基宽禁带半导体材料是制备高温、高功率、高频电子器件以及发光管、紫外探测器等光电子器件的重要材料。

    Gallium Nitride ( GaN ) based wide direct bandgap semiconductors have become the most important materials for high temperature , high power , high frequency electronic devices as well as for light emitting diodes , laser diodes , ultraviolet photodetectors .

  14. 超辐射发光管(SLD)可以作为光纤陀螺(FOG)、波分复用光纤通讯及光处理技术、光时域反射仪(OTDR)等的光源,近些年来在国内外多有研究。

    Superluminescent diodes ( SLD ) are required as light sources for many applications including fiber optical gyroscopes ( FOG ), and for wavelength division multiplexing ( WDM ) optical fiber communication and testing systems , and also for optical time domain reflectometers ( OTDR ) .

  15. 新型圆柱结构的场发射碳纳米管发光管

    Investigation of Carbon Nanotubes Field Emitting Light Tube of Novel Cylinder-Shaped Structure

  16. 并五苯场效应发光管机理分析与场效应管制作

    Analysis and Fabrication of Light-emitting Field-effect Transistor Based on Pentacene

  17. 一种新型基于三色发光管测色的算法及仪器设计

    New Algorithm of Color Measurement Based on Triple Luminotrons and Instrument Design

  18. 温度计的指示器由发光管制成。

    The indicator of the thermometer is made of LED modulator tubes .

  19. InGaAsP/InP双异质结发光管暗缺陷的观察和研究

    Observation and Study on the dark defects in ingaasp / inp double-heterostructure LEDs

  20. 1.55μm超辐射发光管端面减反射膜的研究

    Facet antireflection coating of 1.55 μ m superluminescent diode

  21. 超辐射发光管出射光谱的理论计算和实验验证光谱辐(射)出(射)度

    Theoretical Calculation of SLD Output Spectrum and Experimental Verification ; spectral radiation exitance

  22. 等值图在测距仪发光管相位测定中的应用

    The Usage of Isogram in the Phase Measurement of a Distance Meter Shining Tube

  23. InGaAsP/InP双异质结发光管中的深能级

    Deep level in ingaasp / inp DH LED

  24. 深能级杂质对InGaAsP/InP发光管输出功率饱和性的影响

    Deep level impurity effect on the output power saturation in ingaasp / inp LED

  25. InGaAsP/InP双异质结发光管退化特性的研究

    The study of degradation characteristics for the ingaasp / InP double heterojunction light emitting diodes

  26. 非对称波导GaAlAs/GaAs快速边发光管的几何结构及性能

    Stripe Geometry and Performance of High Speed GaAlAs / GaAs Edge-Emitting LED with Asymmetrical Waveguide

  27. InGaAsP/InP双异质结发光管光功率的温度和饱和特性

    Characteristics of Temperature and Output Saturation in InGaAsP / InP Double Heterostructure Light Emitting Diodes

  28. 长波长1.3μm激光器腔面镀减反射膜超辐射发光管的制备

    Fabrication of long wavelength 1.3 μ m superluminescent diodes with antireflective coatings on laser diode facets

  29. 砷化镓面发光管输出光功率某些问题的探讨

    Investigation of problems about the light power output of gaas / gaalas DH surface emitting diodes

  30. 有源层受主浓度对InGaAsP/InP双异质结发光管特性的影响

    The dependence of characteristics of ingaasp / inp DH LEDs on acceptor concentration of active layer