变容二极管

分析了调频定距引信中采用变容二极管直接调频时调制的非线性及其对定距精度的影响。

Gives an analysis on the non linearity in frequency modulation when a varactor modulates directly in a FM ranging fuze , and shows its influence on the precision of ranging .

变容二极管频率变换作用的数学分析

Mathematical analysis of varactor 's frequency conversion effect

超突变结变容二极管的杂质浓度分布及n值

Distribution of Impurity Concentration and n Value for Hyperabrupt Varactor

变容二极管调谐体效应振荡器的CAD

CAD Of Varactor - Tuned Gunn Diode Oscillator

用MOCVD生长了用于GaAs变容二极管的结构材料。

GaAs epitaxial structure for hyperabrupt junction varactor was grown by MOCVD .

本文提出了一种用a-Si作绝缘层的表面变容二极管。

A Semiconductor surface varactor with an insulating a-Si layer is presented .

设计了一种电压控制LC振荡器，利用LC振荡电路作为振荡源，通过变容二极管来调节振荡器的频率，采用锁相环来提高输出频率的稳定度，以FPGA+单片机作为整个系统的测控部分。

This paper presents a voltage-controlled LC oscillator with a phase-locked loop based on FPGA and MCU .

变容二极管C-V特性的控制技术

Control Technology of C-V Characteristics for Variable Capacitance Diode

超薄型封装工艺，超薄型变容二极管和Wi-Fi系统功率放大器；

The ultra-thin packaging technology & the ultra-thin varicap diode and the Wi-Fi system power amplifier .

本文叙述了一种利用FET振荡管和GaAs超突变结变容二极管构成的电压控制振荡器（VCO）。

A voltage-controlled oscillator ( VCO ) consisting of a FET oscillator and a GaAs hyperabrupt varactor is presented in this paper .

用封装变容二极管作为非线性元件，研制了一个8mm波段大动态上边带上变频器。

A 8mm balanced varactor upconverter with large dynamic range has been developed using packaged varactors as nonlinear elements .

VCO采用变容二极管进行并联电调谐，并优化电路以获取较宽的调谐频带。

A varactor is used to tune the frequency of the VCO , and optimization is processed to get broad tuning band .

本文叙述采用双栅砷化镓场效应晶体管和高优值硅外延变容二极管实现UHF电子调谐器低噪声化的有关设计和实验结果。

This paper reports the design and experiments of the low noise UHF electronic tuner consisting of a low noise dual-gate FET and a high merit silicon epitaxial varactor .

采用MCS-51系列单片机控制变容二极管的输入电压以实现输入回路的调谐与高度稳定的本振，提高镜像抑制比；

We used MCS-51 signal - microcomputer to control the input voltage of varicap then we can turn in the input circuit , gain stable frequency and high image-holdback ratio ;

因此，现在的VCO器件通常采用片外分立的PN结变容二极管，这样不仅增加了系统的面积，而且存在封装复杂、功耗高以及成本高等缺点。

Hence , current VCO is often implemented by an external PN junction varactor . The off-chip device not only increases final system area , but also increases package complexity , power consumption and cost .

本文叙述了用场效应振荡管和砷化镓常γ电调变容二极管及恒温控制电路等构成的C波段高频率稳定度宽带场效应管电压控制振荡器（VCO）的设计和电性能。

Presented in this paper is the design and performance of a C band high frequency-stability broad-band FET voltage-controlled oscillator ( VCO ) consisting of an oscillating FET and a GaAs electrically tunned varactor with constant y as well as a constant temperature-controlled circuit .

并与采用GaAs超突变结变容二极管的VCO器件进行了比较，说明由于集成了RFMEMS可变电容，使得在RFMEMS可变电容的机械谐振频率近端时，MEMSVCO的相位噪声特性发生了改变。

And moreover , the performance of SSB phase noise is compared with VCO which is integrated with GaAs hyperabrupt junction varactor . It is explained that the characteristic of SSB phase noise changes close to the mechanical resonant frequency of RF MEMS variable capacitor .

超突变结构变容二极管雪崩击穿电压的研究

The study of avalanche breakdown voltage for hyperabrupt varactor diode

常γ砷化镓电调变容二极管设计与实验研究

Design and Experimental Investigation of GaAs Electronic Tuning Varactor with Constant Gamma

变容二极管特高频调谐器调频式谐振特高压试验电源拓扑结构

Topological Structures of UHV Frequency Tuned Resonant Test Power Supply

讨论变容二极管在调频电路中的应用。

The application of the variode in frequency modulation circuit are discussed .

变容二极管直接调谐电路的分析

The Analysis of Variable Capacitance Diode Turning Circuit Directly

一种新的提高变容二极管调频电路频率稳定度的温度补偿方法

A Temperature Compensation Method for Improving Frequency-Stability in Variable-Capacitance Diode Frequency Modulation Circuit

介绍变容二极管的电特性和温度特性。

This paper analyze the parameter frequency multiplier consist of variode in detail .

三倍频器的核心采用反向并联变容二极管对。

Varactor diodes constituting anti-parallel pairs structure is used to achieve the tripler .

模拟调制码速率、调制频偏都受变容二极管特性的限制，模拟调制功能单一、调制方式不可重组、单个系统调制频率不可改变，无法满足频率多变的需求；

The property of diode limits code rate as well as frequency - offset .

GB/T15178-1994变容二极管空白详细规范

Blank detail specification for variable capacitance diodes

本文详尽地讨论了砷化镓超突变结变容二极管的设计原理和方法。

In this method , the capacitance of the varactor diode is changed by voltage .

用非晶硅作绝缘层的表面变容二极管

Semiconductor Surface Varactor with Insulating a-Si Layer

文中给出了变容二极管行波式参量放大器的分析；

A detailed analysis on the travelling wave type semiconductor diode parametric amplifier is also given .