悬挂键
- 网络Dangling bond
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基于这类薄膜的光吸收和电导特性,应用带Nd背键的悬挂键模型分析讨论了这些变化特性的物理原因。
Based on the optical absorption and conductive properties in this kind of alloy films , using the dangling bond model with Nd back bonds , the variation of properties are analyzed and discussed .
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并指出,V4~-的单个悬挂键上的η~2比其它具有单个悬挂键的缺陷小,是由于V4~-的势分布向一侧有较大偏重所致。
Our results point out that ? 2 on single dangling bond of V_4 ~ - is smaller than that of other defects with single dangling bond , this is because the potential distribution for V4 ~ - deviates from the single dangling bond case .
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同时氢离子还可以饱和非晶金刚石薄膜表面的悬挂键,使薄膜表面具有一定含量的C-H键,从而降低电子亲和势;
It could also saturates dangling bonds on the a-D film surface with bydrogen , leading to a hydrogenated lowed-electron-affinity surface .
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接近表面熔化温度时,双悬挂键单原子、c(2×2)和三聚体等亚稳态结构都消失,表面只存在稳定的p(2×1)结构。
Up to the surface melting temperature , these metastable structures disappear and the simple p ( 2 × 1 ) structure remains on the surface .
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模型以氢钝化SiC表面悬挂键,降低SiC表面的界面态密度,消除了费米能级钉扎,获得理想的SiC表面。
The density of surface states is lowered to unpin the Fermi level because the hydrogen passivated dangling bonds of the surface .
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PECVD氮化硅膜氢键及硅悬挂键的研究
Silicon Dangling Bonds and Hydrogen Bonding Configurations in PECVD Silicon Nitride Films
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另一方面DNA分子具有双螺旋结构,其对称性较低,分子中存在大量的悬挂键,这些悬挂键上的未成对电子也会进入π&电子系统。
On the other hand , the double helix DNA molecule with low symmetry has a lot of hanging bonds , and the unpaired electrons of these hanging bonds may come into the π - electrons system .
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a-Si:H薄膜的一系列特性同膜中的氢存在密切关系,一方面,氢以单氢化合物(Si-H)方式结合到膜中,从而饱和了膜中的悬挂键;
The speciality of a-Si : H films is closely associated with hydrogen content in films .
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发现与P原子悬挂键有关的本征满表面态在Г点位于价带顶下0.6eV处,而缺陷引入的空表面态位于价带顶上1.1eV处(Г点)。
It is found that the intrinsic occupied surface states related to P atom dangling bonds are located at 0.6 eV below the valence band maximum , while the defect induced empty surface states are located at 1.1 eV above the valence band maximum (Γ point ) .
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利用XPS测试进行机理分析,钝化效果实现是由于氧化剂将氧原子与表面的悬挂键结合,使样品表面的悬挂键密度减少,进而减少杂质能级的密度。
XPS results were used for further mechanism analysis . The bonding between Ge atom and O atom has reduced the density of dangling bond , which in turn decreases the density of combination energy level and realizes the passivation effects .
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根据这些结果,可以推测InP(100)的富In表面存在In的空位,与In空位相邻的P原子悬挂键发生了转向。
It could be deduced from the above evidences that there must exist some In vacancies on the In-rich InP ( 100 ) surface , and the dangling bonds of those P atoms which are located next to the In vacancies orientate off their normal directions .
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硫对砷化镓表面悬挂键的饱和作用
The saturation of dangling bonds on GaAs surface by sulfur
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a-Si:H中无序对悬挂键电子状态的影响
Effect of disorders in a & Si : h on dangling bond states
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这些平面结构采用三角形网状结构是为了减少悬挂键的数目。
The planar structures are at the origin of the minimization of dangling bonds .
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硅的位错核心结构无悬挂键
No Dangling Bond in Si Dislocation Core Structure
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这些悬挂键在较高氢分压下可部分被饱和。
These dangling bonds can be saturated by H.
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悬挂键式双向铧式犁
Alternate type mounted reversible moldboard plough
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经活化后表面硅悬挂键明显增加,从而对羟基进行有效的化学吸附。
Surface silicon dangling bonds are significantly increased after surface activation which lead to effectively chemical adsorption of OH groups .
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这意味着杂质(如石墨)和缺陷(悬挂键)极大地影响了膜的场发射性能。
It means that the impurity ( such as graphite ) and defects ( dangling bonds ) in the films greatly affect their field emission .
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考虑到(111)AInP衬底的悬挂键密度比较低,在生长过程中有意提高了V/Ш比。
Considering the low dangling bond density of indium atoms on ( 111 ) A InP , the V / Ш ratio was increased intentionally .
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表面的几何结构、拓扑结构影响着不同悬挂键上电子交换、成键和迁移作用之间的竞争。
The geometric and topological structures of the surfaces impact the competition between the exchange , bonding and transfer of the electrons in different dangling bonds .
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在荷电的悬挂键模型下,计算了各种情况下的费密能级和电子浓度。并对两类不同的非晶半导体作了详细的讨论。
With approximation of single dangling bond , the positions of Fermi level and the electron densities have been calculated for two groups of amorphous semiconductors .
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研究表明氢化可饱和α&Si:H中的悬挂键和应力键等缺陷,并使能隙中的电子态消除。
It is shown that hydrogenation compensates dangling bonds as well as strained bonds in α & Si and thus removes the undesirable electronic states in band gap .
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包膜工艺消除了纳米晶Y2O3:Eu3+红色荧光体的表面缺陷和悬挂键,改善了其发光特性。
The hanging-bonds and the defects on the surface of nanocrystalline Y 2O 3 : Eu 3 + particle were removed and its luminescence intensity was increased by the coating process .
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得到的结果表明,由悬挂键引起的禁带中的电子态可因氢原子饱和而消失,与实验结果相符。
The results obtained show that the gap states due to the dangling bonds existing in amorphous SiC system could be eliminated by hydrogen saturation , which supports theoretically the related experimental results .
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但是由于其含有大量的缺陷态(主要是悬挂键),使其在实际应用方面受到一定限制,其中最主要的问题是光致衰退效应。
However , because it contents lots of defect states ( mainly dangling bonds ), its application in practice has been confined in some ways . The main problem is the light-induced degradation ( Staebler Wronski Effect ) .
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薄膜的致密程度、键畸变程度和悬挂键数目与其晶态比有关。提高晶态比可使一部分带尾态和带隙态分别转化为扩展态或消失。
The density , the bond distortion and the number of dangling bonds decrease with the increase of the crystalline volume fraction , resulting part of the band tail states and the band gap states are transformed into extended states or disappear .
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本文根据非晶半导体中的荷电悬挂键模型,用统计力学的方法推导出三种荷电缺陷中心的分布函数,并由此得到系统的费米能级和荷电中心上平均电子数的关系式。
In this paper , the distribution functions of three kinds of charge defect centers are given by using statistical mechanics method according to model of charge defect centers in amorphous semiconductors . The relation between Fermi energy and average electron number at charge defect centers is also given .
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合成了含有悬挂醚键的大孔交联聚苯乙烯树脂,研究了它们对正己烷溶液中苯酚的吸附性能。
Several kinds of macroporous crosslinked polystyrene resins with pendent ether bond are obtained from chloromethylated polystyrene and their adsorption properties for phenol from hexane solution are discussed .