磁性半导体

Ⅲ-V族窄带隙掺Mn稀磁性半导体材料研究进展

Research Progress in ⅲ - ⅴ Group Narrow Band Gap Mn-doped Diluted Magnetic Semiconductor Materials

稀释磁性半导体Sn（1-x）MnxO2的室温铁磁性

Room-temperature ferromagnetism in Mn-doped SnO_2 diluted magnetic semiconductor

目前，掺杂ZnO稀释磁性半导体材料的研究在国外已受到高度关注，而此项研究在国内则尚处于初始阶段，其研究对于发展稀释磁性半导体材料及其应用具有重要意义。

The research for diluted magnetic semi-conductor is of important application significance .

Ge基和ZnO基磁性半导体的磁性与输运研究

Magnetic and Transport Properties of Ge-based and ZnO-based Magnetic Semiconductors

半磁性半导体材料Cd（1-x）MnxTe晶体生长

Growth of Semimagnetic Semiconductor Cd_ ( 1-x ) Mn_xTe Crystal

Ti（1-x）CoxO2铁磁性半导体薄膜研究

Study of ferromagnetic semiconductor films : Ti_ ( 1-x ) Co_xO_2

升华法制备半磁性半导体晶体Zn（1-x）MnxSe及其发光特性

Preparation and Cathodeluminescence of Semimagnetic Semiconductor Zn_ ( 1-x ) Mn_xSe

半磁性半导体Cd（1－x）MnxTe深能级的研究

Study on Deep Energy Level in Semimagnetic Semiconductor Cd_ ( 1-x ) Mn_xTe

氧化物铁磁性半导体的电子结构和磁性研究掺杂ZnO稀磁半导体磁性的第一性原理计算

Electronic Structure and Magnetism of Oxide-based Ferromagnetic Semiconductors ; First Principle Study on Magnetism of Doped ZnO Based Diluted Magnetic Semiconductors

稀释磁性半导体Zn（1-x）FexSe薄膜的光学特性

Optical properties of the diluted magnetic semiconductors Zn_ ( 1-x ) Fe_xSe thin films

垂直Bridgman法生长半磁性半导体Cd（1-x）MnxTe晶体

Growth of Cd _ ( 1-x ) Mn_xTe Crystals by a Vertical Bridgman Method

掺杂浓度对稀磁性半导体（Ga，Fe）As的晶格常数及磁性质的影响

The effect of concentration of impurity on lattice constants and magnetic configurations of diluted magnetic semiconductor ( Ga_ ( 1-x ) Fe_x ) As

低温分子束外延技术制备的Mn掺杂GaAs是目前研究比较成熟的稀释磁性半导体体系。

Mn doped GaAs prepared by low temperature molecular beam epitaxy method is one of the most matured diluted ferromagnetic semiconductor systems .

稀释磁性半导体Pb（0.954）Mn（0.046）Se纳米晶体的合成和XANES测试

Synthesis and XANES measurement of diluted magnetic semiconductor Pb_ ( 0.954 ) Mn_ ( 0.46 ) Se nanocrystals

SnO2基铁磁性半导体的第一性原理研究

First-principles Study of SnO_2-based Ferromagnetic Semiconductors

稀磁性半导体（DMS）是指在半导体化合物中，由磁性过渡族金属离子部分替代非磁性离子所形成的一类新型半导体材料。

Diluted magnetic semiconductors ( DMSs ) are a new type of semiconductor material formed by substituting magnetic metal ion for nonmagnetic ion .

采用双源热蒸发方法制备了纳米Zn1-xFexSe稀释磁性半导体薄膜，根据X射线衍射谱和Raman散射谱研究了薄膜的晶体结构和声子谱特征。

Nanometer Zn_ ( 1-x ) Fe_xSe diluted magnetic semiconductor films are fabricated by the double-source deposition . The crystal structure and phonon spectrum feature of the films were studied by X-ray diffraction and Raman-scattered spectra .

用铁磁共振研究了Fe-ZnO磁性半导体。

Ferromagnetic resonance is used to study Fe-ZnO magnetic semiconductors .

本文利用Floquet理论、散射矩阵以及有效质量近似理论研究了磁性半导体异质结中光子辅助的量子输运特性。

In this thesis , the photon-assisted quantum transport properties in magnetic semiconductor heterostructure are investigated by using Floquet theory , the scattering matrix and the effective-mass approximation theory .

稀磁半导体（DMSs）是指在非磁性半导体材料基体（通常是AB）中通过掺入少量磁性过渡族金属元素或稀土金属元素使其获得铁磁性能的一类新型功能材料。

Diluted magnetic semiconductors ( DMSs ) is a new type of functional materials , which can be obtained by using a small amount of magnetic transition metal elements or rare earth elements to replace the cations in the non-magnetic semiconductor materials ( usually AB type ) .

在Efros变程跃迁导电模型基础上，我们建立了考虑库仑相互作用、载流子之间自旋-自旋交换作用和硬带能的统一模型，成功地解释了ZnO基磁性半导体中观察到的电子输运现象。

The spin-dependent variable hopping model has been proposed by taking into account the electron-electron Coulomb interaction , the spin-spin exchange interaction and hard gap energy in the same frame , which can well described the observed magnetic transport properties in both Co-ZnO and Fe-ZnO magnetic semiconductor systems .

是否能制造出室温下的铁磁性半导体？

Can we make semiconductors that are ferromagnetic at room temperature ?

铁掺杂氧化铟铁磁性半导体薄膜的生长及性能研究

Preparation and Physical Properties of Iron-Doped Indium Oxide Ferromagnetic Semiconductors

永磁开关磁链电机弱磁运行的结构与性能氧化物铁磁性半导体电子输运特性的研究

Configuration and performance of permanent magnet flux-switching motors with consideration of flux-weakening operation

这些结果对于磁性半导体异质结在量子器件方面的应用可能是有帮助的。

These results may be helpful to make the magnetic semiconductor heterostructures into the quantum devices .

氧化物磁性半导体薄膜的电输运性质只与材料中氧空位的浓度相关。

Electric transport property of oxide magnetic semiconductor film is only related to concentration of oxygen vacancy in material .

结果表明，适当增加过渡元素掺杂量将有利于提高磁性半导体室温饱和磁矩。

Therefore , suitably increasing Fe content is favorable to obtain magnetic semiconductor films with high saturation magnetization at room temperature .

对稀磁半导体材料而言，CoTiO2体系是一种居里温度高于室温的很有应用前景的稀释磁性半导体。

For diluted magnetic semiconductors , CoTiO_2 system is a hopeful diluted magnetic semiconductor because of its T_c higher than room temperature .

稀释磁性半导体（简称稀磁半导体），是指半导体中的阳离子被过渡金属离子部分无序取代而形成的一种崭新的半导体材料。

Diluted magnetic semiconductor ( DMS ), in which non-magnetic cations are randomly substituted by transition metal ions , is a novel kind of semiconductor .

主要研究内容：1.磁性半导体量子阱两边的非共线磁化对束缚态能级的影响。

The main research contents are in following . Firstly , the influence of the magnetization in magnetic semiconductor on the bound state is studied .