液相外延

液相外延系统中高指标热场的实现

Realization of Precise Thermal Field in LPE System

Si薄膜低温液相外延

Silicon film preparation by liquid phase epitaxy at low temperature

p型掺杂GaAs液相外延材料的光致发光研究

Study of Photoluminescence in p-Type Doped GaAs Grown by Liquid-Phase Epitaxy

双n层GaP液相外延生长

Growth of Double n - layer LPE GaP

用双晶X射线衍射研究Si液相外延层

The study of Si liquid phase epilayers using double crystal X ray diffraction

Cr，Ca∶YAG的液相外延生长

Growth of Cr , Ca ∶ YAG by Liquid Phase Epitaxy

集成光学用掺Cr2O3：LN单晶薄膜的液相外延

Liquid Epitaxy of Cr_2O_3 Doped LiNbO_3 Film used in Integrated Optics

Ga（1-x）AlxAs/GaAs双异质结激光器的液相外延研究

Liquid-phase epitaxy study of ga_ ( 1-x ) al_x as / gaas double heterojunction lasers

InSb（1-x）Bix的液相外延

Liquid phase epitaxy of insb_ ( 1-x ) bi_x

掺氧液相外延GaAs的拉曼光谱

Raman Spectra of Oxygen Doped LPE GaAs

GaP：N液相外延层中杂质对PL谱的影响

Influence of the impurity in LPE gap ∶ n on PL spectra

复合电流是液相外延GaAs太阳电池暗电流的主要成分。

The recombination current is the main part of the dark current of LPE GaAs solar cells .

液相外延生长Hg（1－x）CdxTe薄膜及其特性分析

Growth and characterization of hg_ ( 1-x ) cd_x te LPE films

一种液相外延Ga（1-x）AlxAs的新方法

A new method used for solution epitaxial growth of ga_ ( 1-x ) al_xas

液相外延YBCO膜中氧扩散

Oxygen diffusion in a liquid phase epitaxy processed YBCO film

液相外延生长大面积Hg（1-x）CdxTe外延层

Liquid phase epitaxial growth of large area Hg_ ( 1-x ) Cd_xTe epitaxial layers

液相外延Ga（1-x）AlxAs层中位错组态的透射电镜研究

TEM Study of the Configurations of Dislocations in LPE Ga_ ( 1-x ) Al_xAs Layers

采用一种新的液相外延工艺，研制出了具有大光胶结构的V型槽衬底内条形可见光发射半导体激光器。

Using a new kind of liquid-phase epitaxy technology , V-channeled substrate inner stripe visible GaAlAs semiconductor laser with a large optical cavity is fabricated .

液相外延生长的AlxGa（1-x）As/GaAs异质结构的俄歇电子能谱

Auger Electron Spectra of Al_xGa_ ( 1-x ) As / GaAs Heterostructure Grown by LPE

高铝含量AlxGa（1-x）As/GaAs太阳电池的多片液相外延生长

Multi-wafer LPE Growth of High Aluminium Content Al_xGa_ ( 1-x ) / GaAs SoLar Cells

GaxIn（1-x）P/GaAs（100）液相外延界面缺陷的透射电镜观察

Observation on the Interface Defects in LPE Ga_xIn_ ( 1-x ) P / GaAs ( 100 ) by TEM

Insb液相外延层内的两类层错

Two Kinds of Stacking Faults in InSb Liquid Phase Epitaxial Layers

关于ALxGa（1-x）As液相外延层的生长厚度与组分变化

On the Crystal Growth and Composition Variation in Al_x Ga ( 1-x ) A_s LPE Layers

Hg（1-X）CdxTe液相外延层室温红外透射谱分析

Analysis on IR Transmission Spectrum at Room Temperature for Hg_ ( 1-x ) Cd_xTe LPE Layers

液相外延GaAs（1-x）Px混晶的光学声子、等离子体激元和LO声子-等离子体激元耦合模

The optical phonons , plasmon and lo phonon - plasmon coupling mode in mixed crystal gaas_ ( 1-x ) p_x grown by liquid phase epitaxy

p/p~+Pb（0.8）Sn（0.2）Te液相外延层等离子体的红外反射光谱

Infrared Plasma Reflection Spectra of p / p ~ + Pb_ ( 0.8 ) Sn_ ( 0.2 ) Te LPE Layer

声表面波材料（Li（1-x）Nax）NbO3单晶薄膜的液相外延生长

LPE Growth of ( Li_ ( 1-x ) Na_x ) NbO_3 Single Crystal Thin Films for Surface Acoustic Wave ( SAW ) Device

利用改进的液相外延技术生长出了GaAs／GaAlAs夜视系统用光源。

GaAlAs / GaAs used for light source of night vision systems has been grown by modified LPE technology .

液相外延生长InGaAsP超薄层

Growth of Ultra-thin InGaAsP Epi-layer by LPE

本文报道了在710℃下AlxGa（1-x）As过冷式液相外延的短时间生长特性。

Growth properties of Al_xGa_ ( 1-x ) As by short-time LPE with supercooling regime at 710 ℃ are reported .