红外探测器

高Tc超导薄膜2×2阵列式红外探测器研究

Study Of The High T_ c Thin Film Array Infrared Detector

高TC超导红外探测器的发展

Trend of the High T_ c Superconducting Infrared Detector

红外探测器有多种用途。

Infrared detectors have many uses

1×8元线阵高Tc超导红外探测器研制

Fabrication for High T_c Superconducting Infrared Bolometer of 1 × 8 Elements Linear Array

空穴在动量空间分布对p型量子阱红外探测器响应光谱的影响

The effect of distribution of holes in the momentum-space on the photoresponse of p-type quantum well infrared photodetector

热释电红外探测器在10.6微米CO2激光通信机中的应用

An application of pyroelectric detector on 10.6 μ m terrestrial co_2 laser communication system

CMOS兼容的微机械P/N多晶硅热电堆红外探测器

CMOS Compatible MEMS P / N Polycrystalline Silicon Thermopile IR Detector

高Tc超导红外探测器平面天线设计

Design for Antenna of High Tc Superconducting Thin Film Infrared Detector

基于MEMS技术的气动式红外探测器的计算机模拟

Simulation of Pneumatic Infrared Sensor Based on MEMS Technology

In（Ga）As量子点红外探测器

In ( Ga ) As Quantum-Dot Infrared Photodetectors

非致冷红外探测器用VOx薄膜的制备与性能研究

Preparations and Properties of VO_x Thin Films for Uncooled Infrared Detector

微透镜用于高Tc超导薄膜红外探测器的设计与讨论

Design and discussion of high Tc Superconducting thin film IR detectors with refractive microlens

Ge（0.1）Si（0.9）/Si近红外探测器的结构设计与试验

Design and experiment of Ge_ ( 0.1 ) Si_ ( 0.9 ) / Si near infrared detector

GexSi（1－x）／Si超晶格红外探测器最佳结构

Optimum structure of Ge_xSi_ ( 1-x ) si superlattice Infrared Detector

新型SiO2栅介质非晶硅薄膜晶体管室温红外探测器

New type of SiO_2 gate insulator a-Si TFT uncooled infrared detector

基于MOSFET漏电流温度特性的室温红外探测器

Uncooled infrared detector based on temperature dependence of drain current of MOSFET

离子注入掺杂Cd（0.2）Hg（0.8）Te红外探测器

Ion implantation doping of Cd_ ( 0.2 ) Hg_ ( 0.3 ) Te for infrared detectors

新颖的Si（1-x）Gex/Si异质结内光电发射长波红外探测器和焦平面阵列的发展

Development of Novel Si_ ( 1-x ) Ge_x / Si Heterojunction Internal Photoemission Long-wave IRD and FPA

光CVDSiO2钝化膜在红外探测器中的应用

Application of Photo-CVD SiO_2 Passivation Films for Infrared Detectors

采用CCD摄像机和带有红外探测器的标志杆对考场进行实时监测。

Using CCD and the sign pole with infrared detector , the system can achieve real time inspecting of examination field .

层叠结构的Si（0.65）Ge（0.35）/Si红外探测器的微结构研究

Study on Microstructure of Si_ ( 0.65 ) Ge_ ( 0.35 ) / p Si Infrared Detector with a Stacked Structure

基于SOISi片的二极管红外探测器激光二极管侧面抽运的Nd：YAG薄片激光器

Diode Infrared Detectors Based on SOI Si Wafers Laser Diode Array Side Pumped Nd : YAG Thin Disk Laser

9μmp~＋－GexSi（1－x）／p－Si异质结内光电红外探测器

P ￣ + - ge_xsi_ ( 1-x ) / p-Si internal photoemission infrared detector with 9 μ m cut-off wavelength

平面型2.6μmInGaAs红外探测器变温特性研究

Temperature-dependent characteristics study of 2.6 μ m planar-type InGaAs infrared detector

为了制备高性能铁电薄膜红外探测器，对Si微桥的湿化学腐蚀工艺进行了研究。

The Si micro bridge was fabricated by wet chemical etching technique in order to get good infrared thermal imaging system with ferroelectric thin films .

热释电BST薄膜红外探测器噪声分析及前置放大电路设计

Noise Analysis of the BST Film Infrared Detector and Pre-amplifier Circuit Design

新型8～14μmGaAs／GaAlAs红外探测器数值模拟和分析

The Simulation and Analysis of a New Type of 8-14 μ m GaAs / GaAlAs Infrared Photodetectors

MOCVD与MBE生长GaAs/AlGaAs量子阱材料的红外探测器特性比较

Performance Comparison of GaAs / AlGaAs Quantum Well Infrared Photodetectors Grown by MOCVD and MBE

新型GexSi（1-x）/Si异质结远红外探测器

A New Type of Far Infrared Detector Based on Ge_xSi_ ( 1-x ) / Si Heterojunction

通过量子阱红外探测器与读出电路组合形成FPA设计研究，数值模拟了探测器与读出电路的隔热性能。

We simulated the heat insulation between quantum-well infrared photodetector and readout circuit .