道沟

道沟道沟
  1. 研究了在化学镀镍溶液中添加分子量在3000-5000的PAA(聚丙烯酸)对沉积速率和不同规格微道沟的超级化学镍填充的影响。

    The deposition rate of the electroless nickel and bottom-up filling behavior for different sub-micrometer trenches were also investigated by electroless deposition solution with an addition of PAA ( Mw : 3000-5000 ) .

  2. 有一道沟和篱笆平行。

    There is a ditch parallel to or with the fence .

  3. 现状天然条件下,四道沟滑坡整体处于稳定状态。

    Sidaogou landslide is stable wholly in natural state now .

  4. 雨水成了洪水,在地上冲出一道沟来,这就是大峡谷。

    The rain fell so heavily that it created the Grand Canyon .

  5. 卡车在泥路上轧出两道沟。

    The truck made two ruts in the dirt road .

  6. 杨金沟白钨矿床产于下古生界五道沟群中。

    The Yangjin'gou scheelite deposit occurs in Wudaogou group of lower palaeozoic Erathem .

  7. 四道沟金矿岩石移动规律分析

    Analysis of the regularity of rock movement of Si Dao Gou Gold Mine

  8. 球沿道沟运动分析

    The theoretical analysis of the motion of a sphere rolling down a grooved track

  9. 四道沟金矿褶皱构造叠加对金矿的控制作用

    The controlling effect of the superimposition of folded structural systems on Si Dao Gou Gold Deposit

  10. 四道沟低产油气藏是目前在哈密坳陷内钻探众多构造圈闭后所发现的唯一油气藏。

    Sidaogou is the only locality to discover a little oil and gas in the exploration of the Hami Depression .

  11. 农坪金矿床产于下古生界五道沟群与燕山期英云闪长(斑)岩接触带英云闪长(斑)岩体内。

    Longping gold deposit occurs in the inner contact between toellite of Yanshan Period and Wudaogou Group of Lower Palaeozoic Erathem .

  12. 杨金沟矿区白钨矿体产于下古生界五道沟群地层与印支期二长花岗岩内外接触带中。

    The scheelite orebody of the Yangjingou mining area occurred in the contact zone of the lower Paleozoic Wudaogou Group strata and the Indo-Sinian adamellite .

  13. 文章通过小型、工业试验和历年的生产数字科学地论证了二道沟金矿矿石性质完全适应混汞法提金。

    Based on laboratory and commercial scale tests and performance data obtained over a number of years , feasibility of gold amalgamation of Erdaogou gold ore is evaluated .

  14. 四道沟金矿床产于震旦系辽河群中低级变质岩系中,矿床主要受东西轴向的褶皱构造控制。

    Si Dao Gou Gold Deposit occurred in medium low grade metamorphite system of Liaohe group , Sinian System . The ore deposit is controlled mainly by east west axial folded structure .

  15. 四道沟滑坡的综合工程地质研究具有十分重要意义,因此论文选择巫山县四道沟滑坡稳定性分析和防治措施作为研究的主题。

    General engineering geology study on the landslide is of very importance , thus in this dissertation the stability and prevention measure of this landslide have been chosen as the research topic by the author .

  16. 正如民歌《小放牛》所唱的:“赵州石桥鲁班爷修,玉石栏杆圣人留;张果老骑驴桥上走,柴王爷推车轧了一道沟。”

    Just like what was sung in the folk song " Child Cowherd , " " Zhaozhou Bridge was built by Lu Ban , and the boulder railings were left by sages . Zhang Guolao passed the bridge on the donkey-back , and Chai Wangye made a rut by pushing the cart on the bridge . "

  17. 本文对用C-V法提取SiC隐埋沟道MOSFET沟道载流子浓度的方法进行了理论和实验分析。

    A theoretical and experimental study on extracting channel carrier concentration for 4H-SiC buried channel MOSFET has been carried out .

  18. 两道减震沟隔震效果的数值模拟研究

    Numerical Simulation for Vibration-isolating Effect of Two Vibration-isolating Slots

  19. 沙壤土地区排水沟道的沟深沟距试验研究

    Experiment and Study of Drains Spacing and Depth in the Sandy Loam Region

  20. 研究结果表明,该森林流域的泥沙来源主要是林道、沟道、沟道两边裸露地;

    Results show that the major sources of sediment are forest paths , stream channels and the bare land beside stream channels .

  21. 侵蚀泥沙主要来源于沟谷坡地(沟头、沟道和沟坡),沟谷地侵蚀模数是沟间地的1.28~2.48倍。

    The erosion sediment mainly comes from gully slope ( gully head , gully bed , valley side ), Erosion modulus of valley is 1.28-2.48 times as that of the area between channels .

  22. 6H-SiC反型沟道和掩埋沟道MOS器件的特性

    Characteristics of Inversion-Channel and Buried-Channel MOS Devices in 6H-SiC

  23. 模拟结果显示,N沟道和P沟道LDMOS晶体管的最大击穿电压都超过了320V,高压隔离超过300V,从而可以确保其高压放大功能。

    Simulation demonstrates that the maximum breakdown voltages of N-and P-channel LDMOS are higher than 320 V , and the isolation structure can withstand the voltage over 300 V , which ensure reliable operation of high-voltage amplification .

  24. 在20V工作电压下,n沟道和p沟道LDMOS高压器件的栅源电压Vgs分别保持在±5V.当一个选址周期结束后,电路能自动复位而不需增加任何复位器件和电路。

    With a supply of 20V , the control signal V_gs for high voltage n-channel and p-channel LDMOS are ± 5V respectively . Having finished one addressing cycle , this circuit can return by itself without any extra device or circuit .

  25. 用桃形沟道代替直沟道以减小接触应力;

    The contact stress is reduced by using peach shape groove raceway to replace the straight groove raceway .

  26. 分析了直接隧穿栅电流随沟道长度、沟道宽度、测试栅压、漏端偏置、衬底偏置变化规律。

    Law of variation of DT current with channel length , channel width , measuring voltage , drain bias and reverse substrate bias is analyzed .

  27. 分析了栅氧化层厚度、沟道长度、沟道宽度、沟道掺杂浓度等器件尺寸参数对传感器性能的影响。

    We analyzed the various factors , such as gate oxide thickness , channel length , channel width and channel doping concentration , which have an effect on sensor performance .

  28. 砂体微相类型主要有四种:深沟道、浅沟道、近漫溢和远漫溢微相,沟道方向是注水优势通道方向。

    In these turbidite facies , the main is axial trend gravity sediment . There are four kinds of sand body microfacies , deep channel , shallow channel , near overtopping and farther overtopping microfacies .

  29. 研究不同类型、不同沟道长度的n沟金属-氧化物-半导体场效应晶体管(MOSFET)在不同栅电压下工作时栅氧化层的击穿特性。

    This work extensively examines gate-oxide breakdown behaviors of n-MOSFET 's including both enhancement-type and depletion-type devices with various channel lengths under different operating conditions .

  30. MOSFET三级模型也成为半经验模型,这个模型不仅包括了亚阈值情况,而且还试图说明了短沟道效应和窄沟道效应。

    MOSFET three models have also become semi-empirical model , this model includes not only the sub-threshold conditions , but also attempts to explain the short-channel effect and narrow channel effects .