钽
- 名tantalum
-
一种金属元素。用来制造蒸发器皿等,也可做电子管的电极、整流器、电解、电容。医疗上用来制成薄片或细线,缝补破坏的组织。
-
SAW级钽酸锂晶体生长
Growth of the LiTaO_3 Single Crystals for SAW Devices
-
含钽光学玻璃的X射线分析
X-ray analysis of optic glass with TA
-
ICP-AES测定高纯氧化钽中13种杂质元素
Determination of 13 Trace Impurities in High-Purity Tantalum Pentoxide by ICP-AES
-
Excimer紫外灯辐照法钽氧化物膜XPS分析
XPS Analysis of Tantalum Pentoxide Thin Films Formed by Using Excimer UV Lamp
-
目前,钽电容器正向着高压、低ESR的方向发展。
Currently , high voltage-low ESR is a developing trend of the tantalum capacitor .
-
小于2%。H2保护了衬钽管,测定重现性好,衬钽管使用寿命可达650次左右。
D was less than 2 % , a little amount of H_2 added to Ar kept the tantalum foil-lined tube in good analytical reproducibility .
-
钽薄板TIG氦弧点焊熔池的动态测定与分析
Analysis and dynamic measure of tungsten inert gas spot welding pool for tantalum sheet
-
分离基体ICP-AES法测定高纯钽及其氧化物中杂质元素
Determination of impurity in high purity tantalum and its oxide by ICP-AES after trace-matrix separation
-
SEM分析结果表明铱钽钛金属氧化物阳极涂层呈现多孔多裂纹形貌结构。
The SEM results indicated that all coatings were of a porous and cracked_mud microstructure influenced greatly by the composition of coatings .
-
讨论分析了烧结型固体钽电解电容器电容量C、损耗tgδ、阻抗Z与使用频率f的关系。
This paper analyzed the relation that the capacitance , consumption and impedance of a solid tantalum electrolysis capacitor varied with the frequency .
-
ICP-AES法测定稀土金属中的钛、钼、钨、铌和钽
Determing Method for Titanium , Molybdenum , Tungsten , Niobium and Tantalum in Rare Earth Metals
-
钽薄板小间隙TIG氦弧对接焊熔池形成机理的研究
Study of forming mechanism of molten pool of TIG helium-arc small-gap butt welding for Tantalum sheet
-
这些高比容钽粉基本上能满足于高CV片式固体钽电容器的制作要求。
These powders are substantially able to meet the requirements of manufacturing high CV chip tantalum solid capacitors .
-
公司经营的产品包括贴片二三极管、电容、电阻、钽电容、电感器、IC集成电路等系列。
YINGXINYUAN devotes to the market development on electronic components such as diodes , triodes , capacitors , resistors , inductors and IC parts .
-
退火温度对钽基RuO2·nH2O电沉积薄膜电容性能的影响
Effect of annealing temperature on capacitance of ruthenium oxide films deposited on tantalum substrate
-
对接间隙对钽薄板TIG氦弧焊熔池形态影响的数值分析
Numerical Analysis of Effect of Butt Gap on Molten Pool Form in TIG Helium-arc Welding of Tantalum Sheet
-
渣铁中钽的测定是应用放射性同位素~(182)Ta完成的。
Contents of Ta in slag and iron were measured by means of radioactive isotope ~ ( 132 ) Ta .
-
这些关键应用所考虑的其它因素包括:元件封装设计、工作电源范围和钽器件优异的电容-电压(CV)特性。
Otherconsiderations for these critical applications include component package design , working voltage ranges and the advantageous CV levelsof tantalum devices .
-
KOH亚熔盐浸出低品位难分解钽铌矿的实验
Leaching of a Low - grade Refractory Tantalum - Niobium Ore by KOH Sub - molten Salt
-
在新近的MEMS应用中,氮化钽薄膜已经被证实可以用作MEMS微桥结构的电连接材料,但是目前应用于MEMS的氮化钽刻蚀的研究非常少。
And in recent application , it has been demonstrated that TaN thin film can be used as conductor material for MEMS micro bridge structure .
-
电流密度对电沉积制备钽基RuO2·nH2O薄膜形貌的影响
Effects of Current Density on Adhesion and Morphology of Tantalum-based RuO_2 · nH_2O Film Prepared by Electrodeposition
-
ULSI铜多层布线中钽阻挡层CMP抛光液的研究与优化
Study and Optimization of CMP Slurry Used to Tantalum Barrier Layer of Copper Interconnection in ULSI
-
氮化钽(Ta2N)热场发射阴极有低、高两种发射状态。
Ta_2N thermal field ( TE ) emission has been investigated under both I , w and high emission states .
-
经EBSD测定了不同状态下钽的织构。
Textures of different samples were determined by EBSD .
-
类镍钽软X射线激光用反射镜是周期多层膜,其膜层厚度小、周期数多,制备难度大,实际反射率远小于设计值。
The high reflective mirrors for Ni-like Ta soft X-ray laser are periodical multilayers , whose layer thickness is small and the period number is large , which make them extremely difficult to fabricate .
-
咨询机构MerchantResearch&Consulting称,钽的主要开采地包括巴西(26%)、澳大利亚(12%)以及莫桑比克(17%)等国家。
Brazil ( 26 % ) , Australia ( 12 % ) , and Mozambique ( 17 % ) , according to merchant Research & consulting .
-
高压(160V)低ESR液体钽电容器工作电解质的研究
Study of Working Electrolyte of High Voltage ( 160V ) Low ESR Wet Tantalum Capacitors
-
铌(V)和钽(V)的过氧络合物在分析化学中的应用Ⅰ.酒石酸对利用Ta(V)-H2O2-PAR三元络合物直接分光光度测定钽的影响
Applications of niobium (ⅴ) and tantalum (ⅴ) peroxide complex in analytical chemistry ⅰ . the effect of tartaric acid on direct spectrophotometric determination of tantalum via ternary TA (ⅴ) - h_2o_2-par complex
-
钽薄壁管GTA焊接接头晶粒细化机理
Grain refinement mechanism of gas tungsten arc welded joint of tantalum thin walled tube
-
目前的文献均表明钽镁酸钡Ba(Mg1/3Ta2/3)O3不易获得单一物相。
The single phase is not easy acquired in Ba ( Mg1 / 3Ta2 / 3 ) O3 as the papers so far have showed .