锗半导体

锂漂移锗半导体探测器

Lithium drifted germanium semiconductor detector

本文用六原子模型.分析丁硼、磷原子在硅、锗半导体中刃位错附近的三维振动特性。

This paper analyzed the property of atom of boron and phosphorus vibrating in three dimesions near the edge dislocation in semiconductor of silicon or germanium with model of six-atoms .

利用回转振动法对硅、锗等半导体熔体的粘度进行测试分析，获得许多有意义的结果。

Many useful results can be obtained in the investigation on viscosity of Si , Ge melt by rotary oscillating .

集成电路片一小片如硅或锗等半导体材料，经过搀杂及其它工序使之具有特定的电子特性，尤指在将其加工成电路元件或集成电路之前。

A minute slice of a semiconducting material , such as silicon or germanium , doped and otherwise processed to have specified electrical characteristics , especially before it is developed into an electronic component or integrated circuit .

锗硅合金半导体中无声子参与光跃迁机制研究

The Mechanism of No Phonon Optical Transitions in SiGe Alloy

锗是一种半导体材料，其导电系数介于导体与绝缘体之间。

Germanium is a semiconductor material with its conductivity lying between that of conductors and that of insulators .