锗半导体
- germanium semiconductor
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锂漂移锗半导体探测器
Lithium drifted germanium semiconductor detector
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本文用六原子模型.分析丁硼、磷原子在硅、锗半导体中刃位错附近的三维振动特性。
This paper analyzed the property of atom of boron and phosphorus vibrating in three dimesions near the edge dislocation in semiconductor of silicon or germanium with model of six-atoms .
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利用回转振动法对硅、锗等半导体熔体的粘度进行测试分析,获得许多有意义的结果。
Many useful results can be obtained in the investigation on viscosity of Si , Ge melt by rotary oscillating .
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集成电路片一小片如硅或锗等半导体材料,经过搀杂及其它工序使之具有特定的电子特性,尤指在将其加工成电路元件或集成电路之前。
A minute slice of a semiconducting material , such as silicon or germanium , doped and otherwise processed to have specified electrical characteristics , especially before it is developed into an electronic component or integrated circuit .
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锗硅合金半导体中无声子参与光跃迁机制研究
The Mechanism of No Phonon Optical Transitions in SiGe Alloy
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锗是一种半导体材料,其导电系数介于导体与绝缘体之间。
Germanium is a semiconductor material with its conductivity lying between that of conductors and that of insulators .