锗二极管

该结构在共振条件下将运动信号转换为电压信号输出时，电压可达0.4V以上，足以开启双锗二极管进行电路整流。

In resonance conditions . voltage outputs of the vibration structures are up to 0 . 4V , which can breakover double germanium diode adequately in rectification circuit .

低噪声大面积锂漂移锗PIN二极管红外探测器

Lithium - drifted germanium pin-diodes as large area , low noise infrared detectors

测定锗的二极管阵列检测-流动注射分光光度法

Determination of Germanium by Flow Injection - Spectrophotometry with CCD Diode Array Detector

本文报导了在流体静压力18000kg/cm~2的范围内，锗隧道二极管伏安特性随压力变化的实验结果。

Effects of hydrostatic pressure up to 18000 kg / cm2 on the current-voltage characteristics of germanium Esaki diodes are reported .

为了满足高性能的红外探测要求，以高品质硅基器件研制了选择性外延锗硅肖特基二极管。

To satisfy the requirement for high performance infrared detector , a selective epitaxy Schottky barrier diode of SiGe was realized based on high quality silicon device .

在计算机中，这些二极管基本上是锗或硅晶体二极管。

In computers , these diodes are primarily germanium or silicon crystals .

包括锗硅单层、多层结构的外延生长、以及金属诱导生长多晶锗硅和肖特基二极管原型器件的制备。

The research focused on the growth of SiGe single layer , multi-layers , metal induced growth of poly-SiGe , Schottky barrier diodes ( SBDs ) were fabricated .