非晶硅

非晶硅太阳电池的X射线辐照效应及其低能域光电流光谱观测

X-ray irradiation effect in a-Si solar cell and its below-gap photocurrent spectroscopy observation

非晶硅（a－Si）薄膜太阳能电池是取之不尽的洁净能源&太阳能的光电元（组）件。

Large-area a-Si solar cell in a photoelectric element served as a clean and limitless energy source .

X射线非晶硅面阵探测器B级像质的研究

The Analysis of Level B Imaging Quality Based on the X-Ray Flat-Panel Detector

铁电液晶空间光调制器氢化非晶硅薄膜p－i－n光敏层的研究

Hydrogenated amorphous silicon thin film p I n photosensor for ferroelectric liquid crystal optically addressed spatial light modulators

非晶硅X－射线探测阵列的研究

Investigation of Amorphous Silicon X-Ray Linear Detector Array

掺硼（B）非晶硅（a－Si：H）材料固相晶化（SPC）的研究

Investigations on the solid-phase crystallization of B-doped a-si : h films

一种用非晶硅作绝缘材料的MISS器件

MISS Devices with Insulating a - Si Layer

用于军事和航空电子学的高性能非晶硅合金PIN有源矩阵液晶显示器

High-performance amorphous-sillicon alloy PIN active-matrix LCD for military and avionic applications

X光成像探测器主要包括非晶硅型、非晶硒型和CCD型。

X-ray imaging detector include amorphous silicon-type , amorphous selenium-type and CCD type .

非晶硅CCD列阵图像传感器的设计考虑

Design consideration of amorphous silicon CCD array for imager

传统PECVD制备高品质氢化非晶硅工艺中的Pd/fr匹配

The P_d / f_r Matching in Conventional PECVD Process Preparing High-quality Hydrogenated Amorphous Silicon

Ni金属诱导晶化非晶硅（a-Si∶H）薄膜

Ni Induced Lateral Crystallization of Amorphous Silicon Thin Film

PIN型非晶硅太阳电池界面态对电池性能的影响

The influence of interface state on the characters of PIN-type amorphous silicon solar cells

退火的非晶硅薄膜的Raman光谱研究

Raman Spectroscopy of Annealed Amorphous Silicon

Ar等离子体处理PET在非晶硅太阳电池中的应用

Surface modification of polyethylene terephthalate substrate by argon plasma treatment and its application to amorphous silicon solar cells

该网络系统主要由非晶硅半导体PIN光电探测阵列和胜者全取电子网络组成。

The system is mainly composed of a Si PIN photo electrical detector and WTA electrical network .

新型SiO2栅介质非晶硅薄膜晶体管室温红外探测器

New type of SiO_2 gate insulator a-Si TFT uncooled infrared detector

常压CVD淀积非晶硅薄膜的研究

The Studies on the Amorphous Silicon Thin Films Deposited by CVD at Atmosphere Pressure

当Xg≥6%时，生成薄膜为非晶硅碳（a-SiCx：H）薄膜。

When X_g ≥ 6 % , the deposition films are amorphous silicon carbon films .

非晶硅中的硅氢键与光致亚稳缺陷a－Si∶H中第二类亚稳缺陷的观察

Si-H Bond and Photo-Induced Metastable Defects in a-Si : H Observation of Second Kind of Light-Induced Metastable Defects in Intrinsic Hydrogenated Amorphous Silicon

Ar相对于Ar+来说更为温和，对非晶硅薄膜内纳米晶粒的生长和薄膜的综合质量更为有利。

Relative to Ar + , Ar is more moderate and favorable on grain growth and film quality .

掺过渡金属钴的非晶硅薄膜的ESR和光电特性的研究

Studies on ESR and Photoelectrical Properties of Amorphous Silicon Films Doped with Transition Metal Co

本文介绍了SiH4/PH3混合气体的高频辉光放电法，在硅、玻璃衬底上淀积的掺P氢化非晶硅膜的结构和特性，并对样品作了高温退火试验。

The P - doped a-Si : H film is deposited on substrate of silicon and .

在T>150K时，激发态Er与非晶硅间的能量背迁移降低了Er的发光效率。

At T > 150K , energy back transfer between excited Er and a - Si decreases the PL efficiency .

非晶硅银势垒电池的I-V曲线

The I-V characteristics of silver barrier cells on amorphous silicon films

本文测量了从77°K到470°K非晶硅的电导率和温差电动势率随温度的变化。

This paper deals with the measurement of conductivity and thermoelectric power of amorphous Silicon in the temperature range from 77 ° K to 470 ° K.

非晶硅（a-Si）复合钝化层对改善低频噪声的作用

The Action of a & Si Multilayered passivation Film on Improving Low Frequency Noise

以该膜为基体制成的柔性衬底非晶硅太阳电池，转换效率达4.63%，重量比功率达231.5mW／g。

A new type of flexible a-St solar cell on the transparent polyimide film with conversion efficiency of 4.63 % and power-to-weight ratio of 231.5mW/g was obtained .

非晶硅TFT室温红外探测器的光学特性研究

Study on Optical Properties of Amorphous Silicon TFT-Based Uncooled Infrared Detectors

本文还讨论了α－Si：H中载流子俘获效应的研究在高稳定性PIN型非晶硅太阳能电池研制中的重要性。

We also discuss the importance of carrier trapping effects to the stability of PIN α - Si : H solar cells .