非辐射复合

然而si是间接带隙半导体，其内部存在着很多非辐射复合机制，导致Si材料的发光性能很差，这就限制了Si在光电集成领域的应用。

However silicon has an indirect band gap , and there are many non-radiative recombination mechanism inside the silicon . All these aspects leads to the poor optical property of silicon , and restrict the application of Si in the field of optoelectronic integration .

a-Si：H和a-SiNx：H薄膜中的缺陷以及载流子的非辐射复合

The defects and the nonradiative recombination of photogenerated carriers in a-si : h and a-sin_x : h

对ncSiSiO2薄膜中纳米硅（ncSi）、Er3+和非辐射复合缺陷三者间的关系作了研究。

Correlation between nc Si , Er 3 + and nonradiative defects in Er doped nc Si / SiO 2 films is studied .

GaN衬底和GaAs外延层二者之间较大的晶格失配，导致GaAs外延层缺陷密度很高，非辐射复合增强是造成GaAs光致发光强度低的原因。

The large lattice mismatch between the GaAs substrate and the GaN epitaxial layer , resulting in high-density defects in GaAs epitaxial layer and enhanced non-radioactive , is the reason of low photoluminescence intensity of GaAs .

掺铒nc-Si/SiO2薄膜中nc-Si和Er~（3+）与非辐射复合缺陷间相互作用对薄膜发光特性的影响

Influence of coupling between Er ~ ( 3 + ) , nc-Si and nonradiative centers on photoluminescence from Er ~ ( 3 + ) - doped nc-Si / SiO_2 films

探讨高激光损伤阈值腔面处理技术，包括真空解理、腔面钝化处理、高损伤阈值腔面膜，以抑制腔面的氧化，降低腔面表面态密度，减少非辐射复合，提高器件的COD阂值。

Investigate the high laser damage threshold cavity surface processing technology , including vacuum cleavage , cavity surface passivation , high damage threshold coating . To suppress the cavity surface oxidation , reduce the density of surface state , decrease the radiative recombination , in order to improve COD threshold .

应用红外光谱仪、分光光度计、光声谱仪和正电子湮没寿命谱仪，从不同的角度，研究a-Si：H和a-SiNx：H薄膜中的成分、缺陷以及光生载流子的非辐射复合。

The defects and the nonradiative recombination of photogenerated carriers in a-Si : H and a-SiNx : H films are studied by using infrared spectrometer , spectrophotometer , photoacoustic Spectrometer and positron annihilation life-time spectrometer from various respects .

结果表明，小注入情况下，980nm半导体激光器的低频电噪声主要表现为1/f特性，并与器件的表面非辐射复合电流有着良好的对应关系。

The results indicate that the low frequency electrical noise of 980 nm semiconductor lasers mainly behaves 1 / f noise and exhibits good relation with surface non-radiative current at low injection .

非辐射复合对微腔半导体激光器自发发射寿命调制特性的影响

The Influence of Nonradiative Recombination on the Spontaneous Lifetime Modulation Properties of Microcavity Semiconductor Lasers Methods

器件老化主要是器件焊接、封装和非辐射复合中心的增加造成的。

We attribute the degradation to the chip packaging , soldering and increasing of nonradiative centers .

非辐射复合对1.3μmInGaAsp/Inp激光器T0的影响

The Effect of Nonradiative Recombination on the T_0 Value of 1.3 μ m InGaAsP / lnP LD

高于550℃时，光致发光强度减弱，热缺陷增加了非辐射复合中心。

The PL intensity decreases beyond 550 ℃ and the thermally-induced defects increase the nonradiative carrier-recombination centers .

考虑非辐射复合，采用小信号近似方法分析了微腔半导体激光器的自发发射寿命调制。

With the nonradiative recombination the spontaneous lifetime modulation of microcavity semiconductor lasers by the small-signal approximation is analyzed .

载流子注入水平的降低，减少了腔面处非辐射复合的发生，因而提高了激光器的灾变性光学损伤阈值。

As a result that the rate of the nonradiative recombination is reduced , and the COD level is higher than before .

轰击区的非辐射复合对作用区注入载流子空间分布的影响

Influence of the nonradiative combination velocity in the proton bombarded region on the spatial distribution of the injection carriers in the active layer

我们认为很可能是多孔硅内表面的氧化作用使光致发光峰位蓝移，由氧化作用产生的非辐射复合中心导致光致发光效率的下降。

The blue shift of the PL peak is a result of oxidation of inner surfaces of PS and the decrease of PL efficiency is attributed to the produce of nonradiative recombination centers during oxidation .

本文报道了铜－多孔硅的稳态光致发光，瞬态光致发光和傅里叶变换红外光谱的研究，讨论了铜在多孔硅表面吸附产生的表面电子态所起的非辐射复合中心的作用。

In this paper , the steady-stale photoluminescence , transient photoluminescence and Fourier-transform infrared spectra on Cu-porous silicon are reported . The role of nonradiative recombination centre played by Cu induced surface electronic states is discussed .

纳米碳化硅晶粒界面较高的缺陷态密度导致载流子俘获几率增加，非辐射复合几率减小，纳米β-SiC薄膜表现较长的载流子衰减时间。

The longer decay time of nanocrystalline β - SiC films is attributed to the higher defect state density in the gain interface when the size of β - SiC grain in nanometer size , which will increase the trapping rates of excess carriers and decrease the nonradiative probabilities .

本次实验发现，溴酚蓝对溶菌酶荧光的猝灭是由静态猝灭模式诱发的，二者形成了非辐射基态复合物。

The quenching process of lysozyme-BPB was induced by the static quenching mode to form the nonradiative ground-state complex .

掺磷非晶硅的辐射复合和非辐射复合

Radiation Recombination and Non-Radiation Recombination Process in P Doped Amorphous Silicon