单电子器件

用分子自组装技术制备的单电子器件的MonteCarlo模拟

Monte Carlo simulation of single electron device made by molecular self-assembly technology

硅衬底上自组织生长的锗硅量子点（GeSiQDs）在光电子、微电子和单电子器件领域有着重要的应用前景。

Self-assembled silicon-germanium quantum dots ( GeSi QDs ) have important applications in optoelectronics , microelectronics , and single electron device fields .

利用Matlab强大的计算功能进行单电子器件特性仿真对单电子器件的应用研究有重要意义。

It is very important to the using of single electron devices that simulation the characteristic of the single electron devices by the great calculation function of MATLAB .

传统MOSFET结构正以较快的发展速度接近其物理极限，而单电子器件将成为新型的高性能集成化器件结构。

Conventional MOSFET architectures are approaching rapidly fundamental physical limitations , while single-electron devices are expected to be a new type of integrated device architecture with high performance .

通过对CdS、PbS等半导体纳米粒子的充电电容的计算找到了其在室温下形成单电子器件的最大粒径。

The maximum quantum dot sizes which can form the SET ( Single Electron Transistor ) at room temperature are found by the computation of the capacitance of semiconductor nanoparticles such as CdS and PbS , etc.

在本文中，我们在极低温（0.260K）下对表面声波单电子器件进行了研究，在国内观察到表面声波搬运电子形成的声电电流。

In this thesis we studied the device of single electron transported by SAW at extremely low temperature ( approximately 0.260K ), and observed in China the acoustoelectric current which is induced by SAW transporting electrons from source area to drain area .

非对称性隧穿电容单电子器件模型与模拟

Modeling and simulation of single-electron devices by asymmetric tunneling capacitance

碳纳米管室温单电子器件的构建和特性测量

Fabrication and characteristics of metal particle modulated carbon nanotube single electron transistors

集成化单电子器件研究进展

The Latest Progress of Integrated Single - Electron Devices

单电子器件制备技术的新进展

New Progress of the Preparation for Single-Electron Devices

利用传统微加工与纳米组装技术构建出了金属颗粒调制的复合碳纳米管场效应及单电子器件。

Metal particle modulated carbon nanotube devices have been fabricated using conventional lithography and nanotechnology .

单电子器件的仿真

Monte Carlo Simulation of Single Electron Device

为深入地理解和更进一步地研究纳米结构单电子器件特性奠定了坚实的基础。

This system provides a stable foundation to deeply understanding and further studying of nano-structural single electron devices .

一般来说，可以从模拟，测量，理论等三个方面来分析单电子器件的特性。

We can analyze characteristic of the single-electron device from the simulation , the measurement , and the theory .

对各种纳米电子器件如单电子器件、共振隧穿器件和分子电子器件的研究现状及面临的主要挑战进行了讨论。

The progress and challenge on quantum mechanism nano-devices such as SET , RTD and molecular device were also investigated .

利用较小尺寸巴基葱的电学非线性特性，有希望构造纳米电子学的单电子器件。

Due to their nonlinear electric properties , Bucky onion is considered as a promising candidate for the future single electron devices .

基于主方程单电子器件模拟新方法及单电子电路理论研究

The Research of Novel Simulation Method of Single Electron Transistor Based on Master Equation and the Theory of Single Electron Electronic Circuit

建立了高精度单电子器件测试系统。系统具有良好的温度控制、精确的电学特性测量和可加高强度磁场等性能。

The high precision single electron devices testing system with precision temperature controller , electronic characteristic testing and high magnetic field has been established .

本文总结了单电子器件的工作，同时也讨论了作为此类器件设计基础的库仑阻塞效应。

This paper summarises the work of the single electron devices ( SED ) and discusses coulomb blockade effect , which is basic to SED design .

单电子器件中电子在耦合能级上的几率分布它可能来源于光解过程中一些耦合能级组成的相干重叠态，分子经由此态跃迁时这些能量相近的能级间产生干涉。

The Probability of Single Electron on Energy Levels of Two-coupled-quantum-dot System It indicates that the excitation of a coherent superposition state in some coupled levels occurs during the photodissociation process .

简要介绍了纳米材料的电学性能以及单电子器件的基本原理和应用；

The electric properties optical properties , and photoelectric properties of nano scale materials as well as , basic principle and application for single electron device , are introduced briefly in this paper .

单电子器件以其高效、高功能、高速、低耗（可在常温下工作）、高集成化及经济可靠等优点受到了人们的广泛重视。

Single-electron devices get more and more attention due to their high efficiency , good performance , high speed , low wastage ( working in room temperature ), high integration , reliability and so on .

详细考察了隧道结电阻、电容以及器件结构布局等结构参数和电源电压、温度等工作参数对单电子器件电学性能的影响。

The electric performance of the single-electron devices under the influence of such structural parameters as the tunnel junction capacitance and resistance , and the working parameters such as magnitude of voltage pulse and temperature have bene investigated .

综述了单电子器件的研究进展，包括单电子器件的简要历史、研究现状、基本理论、工作性能及制作工艺，并且深入讨论了本领域今后的发展方向。

In this paper , new progress in research on single-electron device ( SED ) is reviewed , including its history , theory , process and performance . Additionally , the future development in SED is discussed in details .

建立了单电子晶体管的器件和电路模型。

The model of the SET devices and circuits has been established .

用单块电子俘获器件实现可编程二值光学逻辑处理

Optical implementation of programmable binary logic processor by using one electronic trapping device

单电子隧穿器件的研究进展

Progress of Single-electron Tunneling Device

在正统理论的基础上，使用主方程法建立了金属结单电子晶体管的器件模型和算法流程。

Based on the orthodox theory , a model of a single electron transistor ( SET ) of metallic tunneling junctions is built using the master equation method .

伴随着微电子学实验技术不断改进和理论方法的不断完善，利用单分子构建功能电子器件成为纳米领域的一个热门课题。

With continuous development in experimental techniques of micro-electronics and improvement of theoretical methods , constructing some functional electronic devices based on single molecules becomes a hot research topic .

纳米电子学是纳米科技的重要领域之一，其中对单电子现象及其相关器件的研究是纳米电子学的重要组成部分，并形成固态科学与技术的分支领域&单电子学。

In Nano-technology , Nanoelectronics is a most important field . The research on single electron phenomena and the relative instruments are two main components , which form an offset in the solid science and technology field , i.e. , Single Electronics .