漏电流

因此，这种两步方法能钝化干法刻蚀后GaN的侧壁，有效地减小LED器件的漏电流。

This two-step treatment can efficiently reduce the reversed leakage current of GaN-based LED devices .

结果表明Si&OH含量的增大会导致介电常数k的增大、漏电流的降低和介电色散的增强。

The results show that the increasing of Si & OH content in the films can lead to the increasing of dielectric constant k , decreasing of leakage current and rise in dielectric dispersion .

钝化处理对GaN基LED反向漏电流特性的改善

Improvement on GaN-based LED Reversed Leakage Current Characteristic by Passivation Process

实验上，A，B位共掺杂的方法，被认为是改善其漏电流属性的有效方法之一。

Experimentally , A , B sites substitution is considered as the most effective method to reduce the leakage current .

纳米级CMOS电路的漏电流及其降低技术

Leakage Current and Leakage Reduction Techniques in Nanometer Scale CMOS Circuits

人们对于BIT的漏电流属性在实验和理论方面都做了研究。

Therefore , the leakage properties of BIT films have been widely investigated in the experimental and theoretical aspects .

本文设计了一种基于DSP芯片控制的漏电流安全评估系统。

This thesis designs a leakage current safety assessment system based on the control of DSP chip .

深亚微米CMOS电路漏电流快速模拟器

Leakage Power Simulator of CMOS Circuit Under DSM Process

讨论了缺陷运动对PN结漏电流影响的机理。

Finally , the mechanism of PN junction leakage current is discussed .

CMOS电路漏电流模型及优化方法

Modeling and Optimization of CMOS Leakage Current

BaO对高温压敏电阻器漏电流的影响

The Effect of BaO Doping on the Leakage Current of High-Temperature Varistors

基于MOSFET漏电流温度特性的室温红外探测器

Uncooled infrared detector based on temperature dependence of drain current of MOSFET

根据理论分析，修正了反偏PN结漏电流理论。

Leakage current theory for reverse PN junction is modified on the basis of theoretic analysis .

高压反偏硅PN结的漏电流对研磨损伤层的影响

Leakage current of high voltage silicon PN junction in reverse bias & effective in grinding damage layer

瞬态退火过程中高密度缺陷运动对PN结漏电流影响的机理

A study of mechanism for influence of high density defects movement on leakage current of PN junction

CF4预处理后热生长薄栅氧漏电流及势垒研究

Leakage Current and Electron Barrier Height of Thin Tunnel Oxide Grown on a CF_4 Pretreated Wafer

Hg（1-x）CdxTe光伏探测器的表面漏电流机制及其钝化

Surface Leakage Current Mechanism and Passivation of Hg_ ( 1-x ) Cd_xTe Photovoltaic Detectors

PLT铁电薄膜的漏电流与I-V特性的研究

Current Characteristics and Leakage Current of Ferroelectric PLT Thin Films

CdSe核辐射探测器的噪声与漏电流

Noise and Leakage Current in CdSe Detectors with MSM Structure

随着MOSFET尺寸的不断减小，栅漏电流对器件特性的影响日益明显。

The impact of gate-leakage current on device characteristic becomes obvious with the continuous scaling of MOSFETs .

SOS-CMOS电路的电离辐照响应特性4000系列CMOS器件的电离辐射感生漏电流

The Ionizing Radiation Effects of SOS CMOS Devices Leakage current of the 4000 series CMOS devices induced by total dose ionizing radiation

运用导电原子力显微镜研究了PZT／YBCO异质结上漏电流的不均匀性。

A C-AFM was used to probe the leakage current distribution in PZT / YBCO heterostructure .

BaxSr（1-x）TiO3铁电薄膜的制备及漏电流机理分析

Fabrication of Ba_xSr_ ( 1-x ) TiO_3 Ferroelectric Thin Film and Leakage Mechanism Analysis

BST薄膜漏电流温度特性研究

Temperature characteristics of leakage current of BST thin films

TFSOIPMOSFET的导电机理及漏电流的二维解析模型

Current Conducting Mechanism and 2-D Analytical Drain Current Model for TF SOI PMOSFET

同时，掺杂钴增强了PZT薄膜的介电性能并且减少了漏电流。

In addition , cobalt-doping has respective effects on the dielectric properties and leakage current properties of PZT films .

与同厚度的BST膜相比漏电流性能有了明显改善，介电常数也有提高，而损耗仍然保持较低。

Low leakage currents , high dielectric constant and low dielectric loss were obtained .

HfO2高k栅介质漏电流机制和SILC效应

Characteristics of Leakage Current Mechanisms and SILC Effects of HfO_2 Gate Dielectric

高SiOH含量下漏电流的降低是由于封端的SiOH基团降低了薄膜中SiO网络的连通概率p而导致网络电导下降的缘故。

The decreasing of leakage current at high Si OH content is due to the low connecting probability p of networks because the networks break at the terminal Si OH groups .

概述了低压ZnO压敏电阻的重要添加剂的作用，阐述了其电性能三参数（压敏电压梯度、非线性系数和漏电流）的影响因素。

The important additions of low-voltage ZnO varistor and the factors of Electrical Properties ( breakdown voltage gradient , nonlinear coefficient and current leakage ) are summarized .