非晶态半导体

非晶态半导体多层膜的TEM及HREM研究

The structure investigation of amorphous semiconductor multilayer using TEM and HREM

非晶态半导体硅p-n结

The Amorphous Semiconductor Silicon p - n Junction

结果表明，载波钝化膜是一高度无序的非晶态半导体膜且具有p型半导体特性。

Results show that the A. V.passive film is a highly disordered amorphous state .

由金属-非晶态半导体-氧化物-半导体等4层结构组成的MSOS电容器，它的正向偏压C-V特性曲线有一个电容的最小值Cmin，它反映了a-Si：H薄膜的厚度d（？）

A kind of capacitor with four layer structures which consists of Metall-amorphous Semiconductor-Oxide-Semiconductor for short as MSOS capacitor . Its C-V characteristic curve has a minimums Cmin . The minimum Cmin of capacitor represents thickness da of a-Si : H film .

但是目前国内外还缺乏非晶态半导体材料全面和详尽的研究。

Semiconductors are still lack of systematic and detailed study .

非晶态半导体超晶格中载流子的随机输运过程

Stochastic transport processes of carriers in amorphous semiconductor superlattices

非晶态半导体硅的球辐模型

Ball and Spoke Model of Amorphous Semiconductor Si

非晶态半导体超晶格中的纵声学声子折叠效应

Zone-folded La phonons in amorphous semiconductor superlattices

非晶态半导体超晶格研究进展

The Progress of Amorphous Semiconductor Superlattices

报导了周期性调制和准周期性调制的非晶态半导体多层膜的剖面透射电了显微像和其对应的电子衍射花样的性质。

The cross-section TEM photomicrographs and electron diffraction patterns arc presented for periodic and quasi-periodic modulated amorphous semiconductor multilayer films .

实验结果表明，复合膜与非晶态半导体具有相同的电导率-温度变化规律。

The experimental results indicate that the law of conductivity-tempera-ture of the composite films is the same as that of non-crystalline semiconductors .

本文报导用射频溅射法制备出一种新型非晶态半导体超晶格薄膜αSi：H╱αSiY：H，并验证了其量子尺寸效应。

We report here a new type amorphous semiconductor superlattice film a Si : H / a SiY : H prepared by sputtering way and their quantum size effect .

主要包括氧化物玻璃，高分子聚合物，非晶态半导体以及金属玻璃，由于其结构的无序性而表现出的独特物理与化学特性，已成为凝聚态物理与新材料设计的前沿课题。

Having unique physical and chemical properties due to their disorder structures , the investigation on such materials has been becoming the forefront of condensed physics and design to new materials .

在实验基础上，结合有关硫系非晶态半导体中的其他一些光诱起现象的报道，我们提出了以微结构变动为前提、结合半导体能级理论的电子泵浦模型，解释了实验现象。

Based on the experiment and combined with the reports about some other photoinduced phenomenon , we present an electron pumping model which combine the microstructure alteration with the semiconductor energy band theory to explain the phenomenon .

硫系非晶态半导体材料在近远红外域有很好的透光性，具有较低的本征损耗，以及有制备光波导的优点等。

Amorphous chalcogenide glasses are potentially useful materials for IR waveguides , offering both high transparency in the near and far infrared . It possesses much lower intrinsic loss , and merits of the fabrication of the optical waveguide .

本文概述了非晶态半导体主要是非晶硅的电子结构、导电机理、电学和光学特性，以及它的制备方法和在太阳能电池方面的应用。

The present article will provide a survey of the electronic structure , conduction mechanism , electrical and optical properties of amorphous semiconductors mainly of amorphous silicon , as well as its preparation methods and its application to solar cells .

透明非晶态氧化物半导体薄膜晶体管的研究进展

Research and Progress in Transparent Amorphous Oxide Semiconductor Thin Film Transistors

非晶态As2S8半导体薄膜的光激励现象的研究及应用

Research and application of photoinduced phenomena of amorphous As_2S_8 semiconductor films

非晶态材料主要包括氧化物玻璃、高分子聚合物、非晶态半导体以及金属玻璃（非晶合金）。

Amorphous materials mainly include oxide glasses , macromolecule polymers , semiconductors in amorphous state and metallic glasses .

我们主要注意磁光型存储的非晶态稀土－过渡金属合金薄膜和相变型光存储的非晶态半导体薄膜两个方面。

The main attention has been paid on amorphous rare earth - transition metal alloy films for magneto-optical storage and amorphous semiconductor films for phase change optical storage .