高阻态

络合物薄膜在8V电压作用下，可以从高阻态转变成低阻态，跃迁时间为15ns。

The resistivity of the complex film can be changed from high to low at 8 V and the transition time is only 15 ns .

在真空中制成的薄膜，两边在数伏电压的作用下，即可从高阻态变为低阻态，且跃迁时间小于10ns。

The resistivity of the thin film prepared in vacuum can be transformed from high to low under a voltage of few volts . The transition time is less than 10 ns .

由这种材料制成的薄膜，在室温6V电压作用下可以从高阻态转变成低阻态，其跃迁时间小于20ns，并具有极佳的热稳定性。

The complex Cu SCN shows good electrical bistable states and thermal stability . At room temperature , the resistivity of the thin film can be transferred from high to low under 6 V and the transition time is less than 20 ns .

该器件可通过正向及反向电压脉冲的激发而实现高阻态（0态）、低阻态（1态）的转变，相当于信号的写入和擦除。

The switching device can be written from a high-resistance state to a low-resistance state by a voltage pulse and then be erased by a reverse voltage .