RRAM

Finally , we summarize the conclusions for the full paper and make an outlook for the RRAM research .

最后，对全文进行了总结论述，并对RRAM存储器的发展作了展望。

Firstly , this paper studies the electrical reliability issues of RRAM , especially the data retention capabilities , and also proposes a failure mechanism model .

首先，本文针对RRAM数据保持能力（Dataretention）的电学性能可靠性问题展开了研究，还提出了RRAM的一种失效机理模型。

And design comparative experiments to study the influence of annealing on the negative breakdown voltage of RRAM , achieving a method to improve endurance .

并设计对比实验，研究了退火处理对阻变存储器负向击穿电压的影响，得到了一种提高器件耐久性能的方法。

Resistive random access memory ( RRAM ) is one of the most promising candidates for next generation of non-volatile memory .

在各种新型非挥发性存储器中，阻变存储器（RRAM）具有成为下一代存储器的潜力。

In order to overcome the physical limits scaling problem of NVM , scientists have proposed a new storage concept-resistance change memory ( RRAM ) .

为了克服非挥发性存储器的这些问题，科学家们提出了一种新型存储-阻变存储器。

The Resistance Random Access Memory ( RRAM ) is widely investigated by researchers in the world for its simple structure , perfect performance , low cost and compatibility with modern semi-conductive procedure .

阻变存储（RRAM）因其表现的高性能以及结构简单，造价低廉和现代半导体工艺兼容等特点，正在被国内外广泛的研究。

One of the promising candidates is the resistive random access memory ( RRAM ) due to its superior characteristics including simple structure , high density integration , low power consumption , and fast write / erase operation .

电阻随机存取存储器由于其具有结构简单、存储密度高、低功耗、写入和擦除速度过程非常快等优越的特性成为其中最具竞争力的候选对象。

Because of high speed , low power consumption , and good compatibility with traditional CMOS processes , Resistive Random Access Memory ( RRAM ) is considered as one of the strongest competition of the next generation NVM .

其中，阻变存储器以其速度快、功耗低、与传统CMOS工艺相兼容等特点，被认为是下一代非挥发性存储器的有力竞争者。

Resistive random access memory ( RRAM ) is considered as one of the most promising candidates for the next generation of high-density non-volatile memory , owing to its simple fabricating process and compatibility with complementary metal oxide semiconductor ( CMOS ) technology .

阻变存储器因其结构简单，易于集成，与现有CMOS工艺兼容性高，被认为是最具潜力的下一代高密度非易失性存储器之一。