元素半导体

碳化硅（SiC）半导体材料是自第一代元素半导体材料（Si）和第二代化合物半导体材料（GaAs、GaP、InP等）之后发展起来的第三代宽带隙半导体材料。

Silicon Carbide ( SiC ) is one of the third generation of semiconductor materials following the progress of the first generation of element semiconductors ( such as Si ) and the second generation of compound semiconductors ( such as GaAs , GaP and InP ) .

Te-Bi-Se稀散元素化合物半导体制冷材料的合成及应用研究

Synthesis and Application of Te Bi Se Semiconductor Cooling Materials

通过对半导体薄膜内部引入共掺杂元素，半导体薄膜表面或内部加入银纳米颗粒等手段，实现了光电特性的调控和优化。

The optical and electronic properties are tuned and optimized by co-doping some elements or adding silver nanoparticles into the semiconductor films .

这一发现颠覆了之前的观点，使研究者重新思考掺杂元素对半导体的磁性是否真正起到调制的作用。

This discovery challenged the conventional theories and urged researchers to rejudge the real role that a doping may play in tailoring the magnetic properties of semiconducting .

采用射频溅射方法成功制备了由过渡族元素Fe和半导体材料In2O3交替生长构成的Fe/In2O3/Fe多层膜。

Fe / In2O3 / Fe multilayer films have been prepared by RF sputtering method .

稀土元素在气敏半导体中的作用

Effect of the rare earth elements on semiconductor for gas detector

最近，对非磁性元素掺杂稀磁半导体的研究逐渐引起人们的关注，从而避免了稀土元素或过渡元素作为掺杂的稀磁半导体磁性来源的问题。

Recently , Diluted Magnetic Semiconductors ( DMSs ) doping by non-magnetic element have been gradually attracted much attention , which can be averted the origin of magnetic mechanism for DMSs doping by rare earth element or transitional element .