光电晶体管

高增益异质结光电晶体管的研制

Development of High Gain Heterojunction Phototransistor

电化学扩散集电极光电晶体管

Electrochemical diffused collector phototransistor

利用液相外延技术研制出高增益InGaAsP/InP异质结光电晶体管（HPT）。

High gain InGaAsP / InP heterojunction phototransistors ( HPT ) have been fabricated by liquid-phase epitaxy ( LPE ) .

平面外延光电晶体管平面钢管桁架平面外稳定混合有限元分析

Analysis of Out-of-plane Stability for Planar Tubular Truss with Mixed Finite Elements Method

穿通型光电晶体管的直流特性测试

Measurements of the direct-current properties of a punch-through phototransistor

表面阻挡层光电晶体管阻塞的水管堵塞了沟水。

Surface-barrier phototransistor Clogged pipes backed up drain water .

达林顿硅光电晶体管的光放大特性

Light Amplified Characteristic of the Darlington Silicon Photo transistor

外延扩散型光电晶体管他们拉帮结派，扩军备战。

Epitaxial diffused phototransistor They formed cliques and carried arms expansion and war preparations .

异质结光电晶体管增益特性分析

Analysis on gain characteristics of heterojunction phototransistors

面接合型光电晶体管桥面铺装层叠合效应的受力分析研究

The Analysis of Bearing Force and the Study on the Congruence Effect of Bridge Deck Pavement

远红外线光电晶体管

Far ultrared-ray photoelectric transistor

扩散发射极集电极光电晶体管

Diffused emitter collector phototransistor

光敏区边长对发射区边长的最佳比值是7.578425∶1.这些结果将被用于设计低噪声和高频光电晶体管。

And that the optimizing ratio of the side length of the photo-excited region W to the side length of the emitter region is 7.578425:1 . These results will be used to design low noise , high frequency phototransistors .

管道、储罐渗漏检测方法光电复合晶体管检测器

Test methods for leakage detection in pipeline and tank

光电负阻晶体管（PNEGIT）的研制和特性分析

Fabrication and Characteristics Analysis of Photo-Negative Impedance Transistor

对以Al/Alq3/TPD/ITO/玻璃有机/聚合物发光二极管（OLED）为负载器件，以光电双基区晶体管（PDUBAT）型硅光电负阻器件为驱动器件而构成的光学双稳态反相器进行了实验研究。

By using Al / Alq 3 / TPD / ITO / glass organic / polymer light emitting diode ( OLED ) as a load and a photo-dual base transistor as a driver , the research on an optical bistability inverter has been carried out experimentally .

光电双基区晶体管（PDUBAT）物理模型探讨

Discussion on the Physical Model in Photoelectric Dual Base Transistor

光电负阻晶体管的初步研究

The Preliminary Study of Photo Negative Resistance Transistor

光电双向负阻晶体管（PBNRT）是一种新型S型光电负阻器件。

The photo-bidirectional negative resistance transistor ( PBNRT ) is a novel S type photoelectric negative resistance device .

对以Al/Alq3/TPD/ITO/玻璃结构的有机/聚合物发光二极管（OLED）为发光器件，以光电二极管和双极晶体管构成的复合光探测器为光接收器件组成的光耦合器进行了实验研究。

By taking Al / Alq 3 / TPD / ITO / glass organic / polymer light emitting diode ( OLED ) as a light emitter and a integrated photo-detector formed by photo-diode and bipolar transistor as a photo-receiver , a novel opto-isolator has been constructed which is investigated experimentally .

利用作者近期研制的硅光电表面负阻晶体管（PNEGIT）或光电∧双极晶体管（PLBT）两种硅光电负阻器件，提出并成功地实现了一种新型的硅光学双稳态器件。

In this paper , by using a Photo-surface Controlled Negative Impedance Transistor ( PNEGIT ) or a Photo - "∧" Bipolar Transistor ( PLBT ) which have been fabricated by author recently , a new optical bistable device has been proposed and realized by experiment successfully .

光电双向负阻晶体管的研制及特性分析

Fabrication and Characteristic Analysis of Photo - bidirectional Negative Resistance Transistor

提出了一种新型结构的硅光电负阻器件&光电双耦合区晶体管（photoelectricdualcoupledareatransistor，PDUCAT），它是由一个P+N结光电二极管和位于两侧的两个纵向NPN管构成的。

A novel silicon photoelectric negative resistance device & photoelectric dual coupled areas transistor ( PDUCAT ) is proposed , which is composed of a P + N photoelectric diode and two vertical NPN transistors beside the diode oppositely .