化学气相沉积法
- 网络Chemical vapor deposition;CVD;PECVD;mocvd;MCVD
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化学气相沉积法碳纤维表面连续涂覆B4C的研究
A Study of the Carbon Fiber Coated Continually with B_4C by CVD Method
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沉积在Si(100)基片上的CNx膜是用微波等离子体化学气相沉积法(MWPCVD)制备的。
CN x films were deposited on the Si ( 100 ) substrates with microwave plasma CVD method .
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化学气相沉积法合成梳状纳米ZnO及其发光性能研究
Synthesis and luminescence properties of comb-like ZnO nanostructure via CVD method
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氧化铝模板孔洞内化学气相沉积法生长Ge纳米线
Porous Alumina Template - directed Growth of Ge Nanowires by Chemical Vapor Deposition
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氧分压对化学气相沉积法合成ZnO纳米结构形貌的影响
Effect of Oxygen Partial Pressure on the Morphology of ZnO Nanostructure Prepared by Chemical Vapor Deposition
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采用化学气相沉积法,研究了五氧化二磷对Hβ分子筛酸性和孔结构的改性。
The structure and the acidic properties of H β zeolite were modified with phosphorus pentoxide added by using chemical vapour deposition method .
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以ZnS为源用化学气相沉积法在硅衬底上生长ZnO纳米颗粒
Synthesis of ZnO nano-particles on Si substrates by CVD method with ZnS as the source
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研究结果表明:用射频等离子体增强化学气相沉积法,可以在PET上沉积厚度为纳米至微米级的非晶碳氢膜。
The results show : the amorphous hydrogenated carbon film can be fabricated on PET surface by plasma-enhanced chemical vapor deposition .
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利用MTS-H2-Ar体系,用化学气相沉积法(CVD)在SiC基体材料表面沉积SiC涂层。
SiC coatings on the surface of SiC base materials were prepared by CVD method with MTS-H_2-Ar system .
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实验中所用碳纳米管由化学气相沉积法(CVD)合成。
The carbon nanotubes were synthesized by the heat filament chemical vapor deposition ( CVD ) .
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通过化学气相沉积法,在不同的生长条件下合成多种ZnO纳米结构:如四角锥结构、纳米梳结构、纳米阵列结构。
Several ZnO nanostructures , such as nanotetrapods 、 nanocombs 、 array nanostructures , were synthesized under different conditions by CVD .
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化学气相沉积法SiC连续纤维炭芯的研究Ⅰ.加压齐聚反应调制可纺中间相沥青
STUDY ON CARBON CORE FOR SiC CONTINUED FILAMENT BY CVD ⅰ . Preparation of Mesophase Pitch by Oligomerization Reaction under Pressure
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用化学气相沉积法(CVD)在碳/碳复合材料表面沉积TiC涂层。
The TiC coating on the surface of carbon / carbon composites was prepared by CVD method .
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研究了多壁碳纳米管(MWNTs)薄膜的湿敏特性,实验所用的多壁碳纳米管是用热灯丝化学气相沉积法(CVD)合成的。
The humidity sensitive properties of multiwalled carbon nanotubes ( MWNTs ) films have been studied .
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研究了化学气相沉积法(CVD)制备得到的掺硼金刚石膜电极的物理性质和电化学性能。
The physical and electrochemical behaviors of the boron doped diamond film electrode prepared by chemical vapor deposition technique were studied .
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采用热丝化学气相沉积法在覆盖C(60)膜的硅基片上沉积金刚石膜,研究了金刚石膜的成核与生长。
In this paper , the diamond films were grown on the C_ ( 60 ) - coated silicon substrate by using hot-filament chemical vapor deposition technique . The diamond nucleation and growth were studied .
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利用热丝增强化学气相沉积法,在镀Ni的Si基片上成功地生长大面积取向碳纳米管膜,并研究了其场发射性质。
Large-scaled highly oriented carbon nanotube films on Si substrate with Ni as a catalyst were synthesized by hot-filament-enhanced CVD and field-emission properties of the films were studied .
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用常压金属化学气相沉积法(MOCVD)在Si(111)衬底上制备了马赛克结构ZnO单晶薄膜。
Monocrystalline ZnO films with mosaic structure are successfully grown on Si ( 111 ) substrate by atmospheric-pressure metal-organic chemical vapor deposition ( MOCVD ) .
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制备TiO2薄膜的方法很多,主要有溅射法、化学气相沉积法、溶胶-凝胶法、水解-沉淀法、液相沉积法等。
The methods for preparing TiO2 thin films include electron beam sputtering , chemical vapor deposit , sol-gel , hydrolysis-precipitation , liquid-phase deposit and so on .
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结果表明,金属有机化学气相沉积法方法在Si(111)衬底上制备ZnO薄膜时,Ag是一种有效的缓冲层。
All the results show that the metal Ag is an effective buffer layer for the growth of ZnO films on Si ( 111 ) substrate with MOCVD method .
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利用AlAlNSi(111)MIS结构电容频率谱研究了金属有机化学气相沉积法生长的Si基AlN的AlNSi异质结构中的电荷陷阱态。
The charge trap states of AlN_Si ( 111 ) grown by metal_organic chemical , vapor deposition are studied by the capacitance spectroscopy of Al_AlN_Si MIS structure .
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采用化学气相沉积法在镀有SiO2膜的钠钙硅玻璃基片上制备了Sb掺杂SnO2(antimony-dopedTinOxide,ATO)薄膜。
Antimony-doped tin oxide ( ATO ) films were deposited on SiO2 coated soda-lime glass substrates by the chemical vapor deposition method .
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所有结果表明,采用金属化学气相沉积法并引入AlN为缓冲层能有效提高Si(111)衬底上ZnO薄膜的质量。
All the results show that AlN buffer layer is an effective route to obtain high quality ZnO film on Si ( 111 ) substrate by MOCVD .
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用射频等离子体化学气相沉积法(RF-PECVD)制备了含氢类金刚石薄膜(DLC)。
Diamond-like carbon films were prepared by RF-PECVD .
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本课题采用射频等离子体增强化学气相沉积法和射频磁控溅射两种沉积方法在聚碳酸酯(PC)片上沉积类金刚石碳膜(DLC)。
The diamond-like carbon ( DLC ) films were prepared on polycarbonate ( PC ) by methods including plasma-enhanced chemical vapor deposition and radio frequency magnetron sputtering .
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探讨了用微波等离子体化学气相沉积法(MPCVD)在Si(100)衬底上加偏压电场和不加偏压电场情况下金刚石膜的成核行为。
The nucleation behaviour of diamond films on Si ( 100 ) substrates is investigated with and without bias field by MPCVD .
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本文采用低Co硬质合金作为金刚石薄膜的基体材料,用微波等离子体化学气相沉积法(MPCVD)沉积金刚石薄膜。
In the present work , diamond films were deposited on Co-deficient Cemented Tungsten Carbide by microwave plasma chemical vapor deposition ( MPCVD ) .
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以MoF6和H2为原料,采用化学气相沉积法在纯铜基体上沉积出难熔金属钼膜层。分析研究了沉积层的组织、结构和硬度。
Molybdenum coating is deposited on copper substrates from the mixture of MoF_6 and H_2 . The microstructures and microhardness of the deposits are analyzed .
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化学气相沉积法对13X分子筛孔径修饰及吸附性能研究
Modification of Pore Diameter and Adsorption Properties of 13X Molecular Sieve Treated by Chemical Vapor Deposition Method
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以N2和O2为载气,采用催化剂增强化学气相沉积法于聚酰亚胺上获得了Pt和Pd-Pt双层金属薄膜。
Catalyst-enhanced chemical vapor deposition of Pt and Pd-Pt bilayer films on polyimide using N_2 and O_2 as the carrier gases was studied .