反相器

基于增益自举技术加片上体偏置技术的新一代C类反相器技术的应用研究。

Application research of a new generation of class-C inverter which is based on gain-boost technique and on-chip body bias technique .

CMOS反相器高功率微波扰乱效应分析

Analysis of High Power Microwave Disturbance Effects on a CMOS Inverter

在对由SET反相器构成的双稳态电路进行分析的基础上，提出了3种R＿S触发器，最终得出了D触发器。

According to double stable circuit which is constructed by two SET inverters , three R-S flip-flops are presented , and then putting forward D flip-flop .

三值CMOS电流型反相器电路设计

Design of Ternary CMOS Current-mode Inverter Circuits

CMOS反相器在低电压低功率模拟系统中的应用研究

The Research on the Applications of CMOS Inverter to Low voltage and Low power Analog System

输出对CMOS反相器SEL特性的影响评估

The Impact Evaluation of Output to SEL Characteristic of CMOS Inverter

最后，分析了ITO导电膜对CMOS反相器高频特性的影响。

Finally , effect of the ITO on the high frequency characteristics of a CMOS inverter is also analyzed .

基于MEDICI的CMOS反相器SEL特性分析

Analysis of the SEL Characteristic of CMOS Inverter Based on MEDICI

本论文针对基于C类反相器的极低功耗IC设计技术进行了较为深入系统的研究，通过电路创新对传统C类反相器进行改造，推出了新一代C类反相器概念。

This thesis carries out thorough and systematic research focusing on the inverter-based ultra-low-power IC design technique , optimizes traditional class-C inverter through circuit innovation , and proposes a new generation of class-C inverter .

反相器是由具有相同沟道长度而具有不同沟道宽度的负载和驱动TFT组成。

The inverter comprises a load and a drive transistor with identical channel length but different channel width .

在TTL与非门电路中，输出级改用集电极开路的一种反相器。

In TTL NAND circuit , a phase inverter with its output circuit changed to an open collector .

第五章设计了全P沟道TFT构成的屏上驱动电路，包括反相器、移位寄存器、传输门的设计，并用仿真软件进行了仿真验证。

In chapter 5 , the on-screen driving circuits composed of P-channel TFT have been designed , including inverter , shift register , transmission gate and simulated using simulation software .

利用CMOS模拟电路理论，详细分析了CMOS反相器的大信号传输特性和小信号传输特性，并且给出了相应的MatLab和Pspice仿真结果。

Based on analysis theory of CMOS analog circuit , big signal transfer characteristic and small signal respond are analyzed and simulated with Pspice and MatLab in the article .

为证明该新一代c类反相器的实用性，本论文将其应用到级联结构音频∑Δadc的设计实现中，在功耗与性能方面均获得了令人满意的效果。

In order to prove the practicality of the new generation of class-C inverter , the thesis implements an inverter-based cascade audio ΣΔ ADC , whose specifications of power consumption and performance are satisfactory .

此RTT反相器统一模型可成为分析和设计各种RTT器件的有力工具。

This unified inverter model of RTTs is a powerful tool for the design and analysis of RTTs .

论文主要工作和创新点包括：1、针对传统C类反相器直流增益偏低的问题，提出了增益自举型C类反相器概念并对其进行了深入的理论研究及设计实现。

The main work and innovations include : 1 . In view of the problem that the DC-gain of traditional class-C inverter is low , the thesis proposes the concept , in-depth theoretical study and design implementation of a gain-boost class-C inverter .

该文以双反相器闩锁电路为基本存贮单元，采用开关级设计方法设计出一种新型的CMOSJK触发器。

Taking the latch composed of two inverters as basic storage unit , this paper proposes a novel CMOS JK flip-flop based on the design at switch level .

应用增益补偿技术，设计了一种结构新颖的CMOS单端反相器环形压控振荡器，该电路具有较低的压控增益，较好的线性，较强的噪声抑制能力。

A novel architecture single ended CMOS ring voltage controlled oscillator is proposed with gain compensated technology , the VCO achieves a low gain , a linear V-f characteristic and ability of suppressed noise .

使用MEDICI软件对Si-SiGe材料三维CMOS器件及Si-SiGe三维CMOS反相器的电学特性分别进行了模拟分析。

The electrical characteristics of a Si-SiGe 3D CMOS device and inverter are all simulated and analyzed by MEDICI .

此时A2相当于一个简单的单位增益反相器，输入电阻是R1，反馈电阻是R2，输出电压大于零。

A2 then functions as a simple unity-gain inverter with input resistor , R1 , and feedback resistor , R2 , giving a positive going output .

从Ebers－Moll方程组出发，建立在矩形脉冲激励下的BJT反相器的非线性耦合微分方程.介绍了MATH程序语言在求解逻辑门开关电路的非线性耦合微分方程中的具体应用。

An application of MATH on deducing the nonlinear coupling differential equations of the BJT-Not gate , which is stimulated by rectangle pulse signal and is developed from Ebers-Moll equations is presented .

本文基于对传统的CMOS反相器的低电压工作状态的分析，提出了新颖的CMOS高通滤波器，其截止频率可以通过调节工作于亚阈值区的CMOS管的沟道导纳来实现连续可调。

This paper proposes a novel CMOS high pass filter whose cut off frequency can be tuned by tuning the channel transconductance of CMOS transistors which works in weak inversion region , based on the discusses of conventional CMOS inverter .

通过单个反相器、100级反相器链，101级环振电路与210分频电路和一个大规模的SRAM电路来验证了提取的模型参数的有效性和实用性。

Through a single inverter , 100 inverter chain , 101 ring oscillator circuit , 210 frequency circuit and a SRAM circuit to verify the extracted model parameters is effective and practical .

在CMOS数字电路器件中，最典型的基本单元门电路为反相器，它是CMOS数字电路分析设计的基础，因此CMOS数字器件电路级微波扰乱效应研究大多集中在CMOS反相器。

The CMOS inverters are normally chosen in digital circuit devices and it is the foundation of CMOS digital circuit analysis and design . So , the study of microwave interference effects on CMOS digital circuit-level device are mostly concentrated in CMOS inverter .

基于该方案设计了三值反相器、文字运算电路、三值与门/与非门和或/或非门等基本电路，并采用标准CMOS工艺来实现这些电路。

On the basis of the proposed scheme , the ternary inverter , literal , ternary AND / NAND and OR / NOR gates with less complex structure were designed , and the standard CMOS process was adopted without any modification of the thresholds .

本文对最基本的HCMOS器件（反相器和与非门）作了γ辐射损伤实验。

This paper has studied experimentally the y radiation damage to the most fundamental HCMOS devices ( inverters and N-AND gates ) .

研究了它的I-V特性，测得的峰谷电流比为3.4.研究了由平面型共振隧穿二极管构成的单双稳态逻辑单元，实现了作为反相器的功能。

The current-voltage characteristics were studied and the peak valley current ratio ( PVCR ) was 3.4.The monostable bistable logic element ( MOBILE ) constructed by planar resonant tunneling diodes is investigated and realizes the function of inverter .

本文分析了以电阻为负载的传统三值TTL反相器的缺点，借鉴二值TTL推挽输出级的结构，设计了三值TTL电路的推挽输出级。

In this paper , the drawback of conventional ternary TTL inverter with resistor as its load is analysed , and the push-pull output construction of ternary TTL circuit is designed by referring to its binary counterpart .

信号调节电路利用了三个电阻组成回路，构成降压作用，使得信号的值调整为4.5V左右，满足单片机的识别要求，使用74LS04反相器，调整信号为标准脉冲信号，以使单片机进行直接计数。

The signal adjusting circuit uses three resistances together to debase voltage , which makes the signal to satisfy the input request of single-chip computer .

对以Al/Alq3/TPD/ITO/玻璃有机/聚合物发光二极管（OLED）为负载器件，以光电双基区晶体管（PDUBAT）型硅光电负阻器件为驱动器件而构成的光学双稳态反相器进行了实验研究。

By using Al / Alq 3 / TPD / ITO / glass organic / polymer light emitting diode ( OLED ) as a load and a photo-dual base transistor as a driver , the research on an optical bistability inverter has been carried out experimentally .