氮化镓

氮化镓与碳化硅纳米线的CVD法制备与表征

Preparation of GaN Nanowires and SiC Nanowires via CVD Method and Their Characterizations

特别是通过TEM，观察到了鱼骨形的氮化镓纳米带。

It is worthy to mention that GaN nanobelts with herringbone morphology is clearly observed by TEM .

氮化镓基蓝、绿光LED中游工艺技术产业化研究

Industrialization of GaN-based Blue-green LEDs

第二部分为硅衬底氮化镓基绿光LED材料生长及器件性能研究。

The second part is a investigation of the fabrication and the properties of GaN / Si green LEDs .

氮化镓宽禁带材料因其耐腐蚀性、热稳定性好，是制备LED光电子器件的优质材料。

Due to its better chemical and thermal stability , GaN wide band gap semiconductor has become an important material of LED optoelectronic devices .

经由模拟及量测结果，次微米光栅可以破坏氮化镓结构内的光波导模态（waveguidemode），使结构内部的光经由次微米光栅萃取出来。

By simulation and measurement result , sub-micro grating can destroy waveguide mode of GaN epitaxy structure , let light extract from inside of structure .

采用金属镓层氮化技术在石英衬底上生长多晶GaN氮化镓薄膜研究进展

Growth of Polycrystalline GaN on Silica Substrate via Ga Nitridation PROGRESS OF GALLIUM NITRIDE THIN FILM

氮化镓（GaN）纳米材料的制备

Preparation of GaN Nano - materials

氮化镓薄膜中LO声子-等离子体激元耦合模拉曼光谱研究

Raman spectroscopy study on Lo phonon - plasmon coupled mode in GaN thin films

用XRD、SEM、TEM和HRTEM对氮化镓纳米结构表面形貌和微结构进行了分析研究。

The XRD , SEM , TEM , and HRTEM are employed to analyze the morphology and structures of GaN nanostructures .

用MOVPE方法在蓝宝石衬底上生长了高纯氮化镓（GaN）外延材料。

High Purity GaN films have been grown on sapphire substrate by MOVPE .

以氮化镓（GaN）为代表的Ⅲ族氮化物半导体材料，由于其在光电子和微电子器件上的应用前景，受到了人们极大的关注。

Due to their great potential use in optoelectronic and microelectronic devices , GaN-based III nitrides semiconductor materials have been widely investigated .

采用透射电镜高分辨反射电子衍射、扫描电镜形貌观察、X射线衍射等不同方法测试了不同Mg含量的N型氮化镓薄膜的结构。

The structural properties of Mg doped GaN films with different Mg concentrations deposited by MOCVD have been measured by TEM with high resolution reflective electron diffraction , SEM and X ray diffraction .

高效、大功率氮化镓（GaN）基发光二极管（LED）是目前固态照明领域的研究焦点。

Efficient , high-power gallium nitride ( GaN ) - based light emitting diode ( LED ) is currently the focus of research in the field of solid state lighting .

并利用氮化矽钝化层制程对元件进行钝化（passivation）制程，以改善在氮化镓系统所一直被诟病的表面状态以及高频操作时的电流崩溃现象；

The additional passivation layer using the silicon nitride material on device surface reduces the surface trap effect and improve the current collapse drawback .

氮化镓高电子迁移率晶体管（GaNHEMT）模型是GaN微波单片集成电路（MMIC）CAD的基础。

Gallium Nitride High Electron Mobility Transistor ( GaN HEMT ) models are basics of the GaN Microwave Monolithic Integrated Circuit ( MMIC ) CAD .

随着半导体材料氮化镓的技术突破和大功率白光发光二极管（light-emittingDiode，LED）的问世，LED开始进入照明领域，具有广阔的发展前景。

Along with the technological breakthroughs of gallium nitride and the advent of high power white light-emitting diode ( LED ), LED is starting to be used in lighting and has broad prospects for development .

本文分别介绍了Ⅲ－Ⅴ族化合物砷化镓（GaAs），氮化镓（GaN），锑化镓（GaSb）的特性、生长方法，国内外研究水平及应用。

The characteristics , grow methods , application and their R & D of ⅲ-ⅴ compounds GaAs , GaN and GaSb were described respectively in this paper .

由于氮化镓（GaN）基发光二极管外延片是白光发光二极管的核心技术，是半导体照明技术的源动力，因此本文以氮化镓材料为例展开介绍。

As the epitaxy of the GaN-Base wafers is the core technology of the white LED and the original driver of the semiconductor lighting technology , this dissertation focused on GaN material .

掺Mn的氮化镓（GaN）基DMS&（Ga，Mn）N的居里温度超过室温，是能实现室温或更高温度下载流子诱导铁磁性的优选材料。

But the DMS GaN Doped Mn ( GaMnN ) with a Curie Temperature higher than room temperature is one kind of the preferred materials which have carrier - induced ferromagnetism at room temperature or a higher temperature .

ECR-PEMOCVD适合低温外延生长氮化铟，氮化镓，氮化铝等薄膜。

ECR-PEMOCVD was utilized specially for low-temperature growth of epitaxy films of InN GaN , and AlN .

文章就GaN基半导体激光器的市场需求、蓝宝石基片上生长的氮化镓基激光器的研制和发展概况以及近期研究热点作了扼要介绍。

In this paper , market demands of GaN-based semiconductor lasers is outlined , along with description of research and development on nitride-based laser grown on sapphire substrates , as well as their recent research hot spot .

氮化镓（GaN）作为Ⅲ-Ⅴ直接带隙半导体材料，室温下有着较宽的禁带宽度（3.39eV）。

As a ⅲ - ⅴ group direct band-gap semiconductor material , GaN has a wide band-gap ( 3.39eV ) at room temperature .

在该篇论文中，我们利用脉冲激光沉积系统先在Si衬底上制备氮化镓薄膜，然后研究了在氨气氛围中不同退火温度对薄膜的影响。

Annealing is one of the most useful methods to improve the quality of GaN thin films . In this paper , we first fabricate the GaN films on Si substrate by PLD . Then we anneal the samples in NH3 at different temperatures .

氮化镓（GaN）基宽禁带半导体材料是制备高温、高功率、高频电子器件以及发光管、紫外探测器等光电子器件的重要材料。

Gallium Nitride ( GaN ) based wide direct bandgap semiconductors have become the most important materials for high temperature , high power , high frequency electronic devices as well as for light emitting diodes , laser diodes , ultraviolet photodetectors .

研究了利用水平氢化物气相外延（HVPE）系统在蓝宝石衬底上外延氮化镓（GaN）的生长规律，重点研究了作为载气的氮气流量对GaN膜的结构及光学性质的影响。

The influence of carrier gas ( i.e. N 2 ) flow rate on the optical properties of GaN epilayers on sapphire substrates grown by horizontal halide vapor phase epitaxy ( HVPE ) system was studied .

氮化镓（GaN）半导体材料因其具有化学性质稳定、耐高温、抗腐蚀等优良特性，使其非常适合于制作光电（蓝光、绿光和紫外光等）、抗辐射、高频及大功率的电子器件。

Due to the excellent properties of Chemical stability , high temperature resistance and corrosion resistance , GaN Semiconductor Materials is suitable to the manufacturing of the device of optoelectronic ( blue , green and ultraviolet light , etc ), anti-radiation , high-frequency and high-power .

氢化物气相外延（HVPE）是制备氮化镓（GaN）衬底最有希望的方法。

Hydride Vapor Phase Epitaxy ( HVPE ) is a promising growth method for obtaining a GaN substrate . In this paper we have introduced the electrical , optical properties of GaN material and its important use .

气相外延氮化镓掺杂生长的研究

The investigation on the gas phase doping epitaxial growth of GaN

氮化镓基发光二极管产业化中的材料物理问题

Material physics problems in the mass production of GaN based LED