泊松方程

N型金属氧化物泊松方程的解和费米能及Ef的变化范围Ⅰ泊松方程解

The solution of n-type metal oxide crystals Poisson equation ⅰ the solution of Poisson equation

通过求解泊松方程，得到了在不同Nd离子掺杂浓度和不同泵浦光半径情况下激光晶体内的温度和温度场分布。

The temperature distribution in the laser crystals with different Nd concentration and different pumping radii were obtained by using the Poisson equation .

介绍了Fourier变换求解线性偏微分方程的一般方法，并探讨用Fourier变换法求解上半平面带边值条件的双调和泊松方程问题。

This paper discusses the solution of Fourier transform for biharmonic poisson equation with the boundary value condition on upper plane .

基于PVM下的泊松方程并行迭代求解

Parallel Iteration Solution of Poisson Equation Based on the PVM

利用六阶紧致差分格式、结合多重网格V循环算法求解了二维泊松方程的Dirichlet边值问题，并用不同的松弛算子与四阶精度格式的多重网格方法进行了比较。

A sixth-order compact difference scheme and multigrid V-cycle algorithm are employed to solve the two-dimensional Poisson equation with Dirichlet boundary conditions .

本文将基于压力泊松方程技术的原参数N－S方程的张力样条数值解法〔1〕推广应用于自然对流问题的数值模拟，提出了自然对流问题的一个新的数值模拟方法。

In this paper , the tension spline numerical method proposed by the author is applied to solve natural convection problem . The primitive-variable N-S equation is solved by the pressure-poisson-equation technique .

用优化的FFT法和SOR法分别求解了二维泊松方程，在求解精度、速度等方面作了全面比较。

Two methods , SOR and optimized FFT , are tested to solve the two-dimensional Poisson equations .

为了研究在这个过程中引起了多少误差，我们让ni与ne不相同，并用线性化的泊松方程。

To see what error was engendered in the process , we now allow Ni to differ from Ne and use the linearized Poisson equation .

同时，通过求解高k栅介质耗尽区与栅绝缘层区域的泊松方程，得到叠层高k栅介质阈值电压模型。

By solving the Poisson equation of the depletion region of high k gate dielectric and gate insulator region , the threshold voltage model of stack high k gate dielectric is got .

根据载流子分布的连续性，由泊松方程自洽求解，得出了半导体n~-－n结势垒分布的计算方法。

In this paper , according to the continuity of carrier profile , a method of calculating the carrier profile of a semiconductor n & n junction has been obtained , by solving the Poisson equation self-consistently .

然后讨论了目前针对雪崩光电二极管存在的边缘提前击穿问题所使用的几种结构，并根据泊松方程，计算出雪崩光电二极管内部电场方程，通过matlab模拟仿真出在不同电压下的电场分布。

Then several structures that can be used to suppress pre-breakdown of avalanche photodiode are discussed . The electric field distribution in APD is calculated according to Poisson equation , and simulated using matlab .

基于右端项为径基函数的三维泊松方程，推导了轴对称情况下双倒易边界元方程求和形式的f函数通式。

A universal function f with summed form in dual reciprocity boundary element formulation for axisymmetric problems has been derived from three dimensional Poisson 's equation whose right hand is radial basis function .

本文研究了定常N-S型方程和压力泊松方程的耦合求解。

In this paper author investigates a numerical method for the time independent equations of N-S type and pressure Poisson equation .

根据泊松方程，N岛或N层中的施主离子增强SOI层下界面的电场，从而增大埋氧层的电场，导致击穿电压提高。

According to Possion Equation , the ionized donors in n-islands or the n-layer enhance the bottom-interface electric field of the SOI layer , and thus increases E I , resulting in an enhancement of the breakdown voltage .

基于分区求解二维泊松方程，提出了阶梯掺杂漂移区SOI高压器件的浓度分布优化模型。

Based on the solution of 2-D Poisson equation , an analytical model for optimization of SOI high voltage devices with step doping profile in drift region is proposed .

详细阐述基于NURBS的样条有限元法基本原理，选取泊松方程进行求解，采用伽辽金法推导计算公式。

The basic principle of NURBS spline finite element method is introduced in detail , the Poisson equation is chose to solve and calculation formula is derived by Galerkin method .

这种算法对增强（E－）和耗尽（D－）型MOS器件都适用，且避免了对泊松方程的严格数值求解。

The algorithm applies to both enhancement ( E - ) and depletion ( D - ) MOS and the strict solution of Poisson 's equation by numerical method is avoided .

本文采用有限差分算法，对有效质量方程和泊松方程进行了准3D自洽求解，得到了QPC静电势和内部电子密度的分布。

Self-consistent solving the coupled Poisson and effective mass equations is based on the finite difference method , so the distribution of QPC electrostatic potential and electron density is acquired .

而在阈值电压附近，通过对薄膜双栅MOSFET器件建立泊松方程，并利用在硅膜中的等电位近似，得到了该器件阈值电压附件的电流公式。

Near the threshold voltage , the Poisson equation on thin-film double-gate MOSFET devices , and silicon film equipotential approximation , the current formula of the attachment of the device threshold voltage .

基于间接Trefftz法求解泊松方程

Solving Poisson equation based on indirect Trefftz method

提出了具有阶梯分布埋氧层固定电荷（SBOC）SOI新型高压器件，并借助求解多区二维泊松方程建立其击穿电压模型，对阶梯数n从0到∞时的器件击穿特性进行了研究。

A novel SOI high voltage device with step buried oxide fixed charges ( SBOC ) is proposed and the breakdown model based on the 2-D Poisson equation is developed .

采用张弛法数值求解静电势的泊松方程，得出垂直腔面发射激光器（VCSEL）中N型和P型分布布拉格反射体（DBR）中一个周期单元的精确能带图。

Poisson equation of the electrostatic potential has been solved by relaxation method to obtain the accurate band diagrams of a periodic pair of N-and P-type distributed Bragg reflectors ( DBR ) in vertical-cavity surface-emitting lasers ( VCSEL ) .

本文从实用的角度出发求解泊松方程.提出了一个小尺寸MOS器件热载流子效应的模拟方法。

For practical use , a simulation method of hot carrier effect in the small geometry MOSFET is proposed by the direct solution of the Poisson equation and a corresponding software is developed in this paper .

求解泊松方程，由此给出DMOS辐照正空间电荷阈值电压模型表示式。

By resolving Poisson equation , the mathematical expression of the threshold voltage model of DMOS by radiation induced positive spatial charge is obtained .

本文简要介绍和评述了纳米MOS器件的设计模型，并对基于非平衡态格林函数以及薛定谔方程和泊松方程自洽解的器件模型应用进行了举例说明。

This article provides a brief review of physical models of nanoscale MOS devices and gives device modeling examples based on self-consistent solutions to Poisson 's equation , non-equilibrium Green 's functions and the Schr ? dinger equation .

根据彩色AC-PDP放电机理的物理模型，提出了基于粒子流连续性方程和泊松方程的一维彩色AC-PDP放电单元的数值计算模型。

The one dimensional numerical model for analyzing the color AC PDP cell is established based on fluid equations and Poisson equation from its physical model .

l模型封闭三维波浪控制方程，利用三维VOF法确定自由表面的位置，压力泊松方程采用SOR法计算水体内部各点的压强值。

The three-dimensional VOF method is used to locate the free surface and the SOR method is used in the Poisson equation to give the pressure of each point in the water .

通过求解泊松方程，从沟道长度调制效应、阈值电压变化及源极同沟道间的势垒变化三个方面详细分析了短沟道MOSFET的器件特性。

Through solving possion equation , the characteristics of short-channel MOSFET device is analyzed in details in the following three aspects : the effect of channel length modulation , the change of threshold voltage and potential barrier decrease between source and channel .

通过求解二维泊松方程推导了一个简洁的短沟道MOS的阈值电压模型，得到的DIBL因子可用于分析参数对短沟道效应的影响。

A threshold voltage model for short-channel MOSFET is developed by solving a 2-D Possion 's equation . The derived DIBL factor can be used to analysis the influence of the parameters on short-channel effects .

利用泊松方程以及异质结能带理论，通过费米能级-二维电子气浓度的线性近似，推导了基于双异质结双平面掺杂的HEMT器件的电荷控制模型。

By using linear E f n s approximation , a new analytical charge control model of the double heterojunction double planar doped high electron mobility transistor ( HEMT ) is deduced based on Poisson 's equation .