空间电荷区

应用数值方法来解CdTe／CdS异质结J－V特性，进而得出其二极管理想因子、激活能以及异质结空间电荷区党度。

Using a numerical method , the J-V characteristics of n-CdS / p-CdTe heterojunction solar cells have been solved , deducing the diode ideality factor , activation energy and space charge region width .

应用泊松方程分析P+N结空间电荷区

Analysis for p + n junction space charge region by Poisson equation

该模型同时考虑了二极管的反向恢复、端区复合以及空间电荷区边界移动效应。能更精确地模拟PIN二极管的开关特性。

The model takes into consideration of reverse recovery , emitter recombination and moveable bound effect .

SiCMOS结构空间电荷区杂质离化的研究

Study of impurity ionization in SiC MOS structures

用解一维poisson方程的方法分析了SiCPMOS空间电荷区的电特性；

The characterization in space-charge region of SiC PMOS structure is analyzed by solving one dimension poisson equation .

双掺杂单结型p-n结空间电荷区静态特性理论及其实用

The Static Theory of p-n Junction Space-Charge Region with Double Doping-Single Junction Type and Its Practicality

最后，得到了SiCMOS空间电荷区的电势分布、适用于高低频的理想C-V曲线和SiCMOS的平带电容公式。

Based on these , potential distribution in SCR , ideal high / low-frequency C-V curves and flatband-voltage equation for SiC MOS capacitors are obtained .

在研究SiCMOS表面空间电荷区杂质不完全离化的过程中引入了FrenkelPool效应，并建立了在电场作用下SiC杂质离化的新模型。

Frenkel Pool effect has been taken into account in studying incomplete ionization of impurity in the SiC MOS devices , and a new model of impurity ionization in SiC is developed .

建立了带有不掺杂隔离层的突变异质结双极晶体管（HBT）模型，在热场发射－扩散（TFD）理论的基础上，又考虑了空间电荷区中的复合效应。

A more complete theoretical model based on the thermionic-field-dif-fusion ( TFD ) theory including recombination effects in the space-charge-region ( SCR ) for abrupt heterojunction bipolar transistors ( HBTs ) with a setback layer is presented in this paper .

空间电荷区内部载流子的产生与复合；

( 2 ) Generation and recombination of carriers in space charge region .

本文研究了半导体表面空间电荷区中的深能级中心的电场增强载流子产生效应；

The field-enhanced carrier generation of deep level centers in semiconductor space charge region has been studied .

结空间电荷区和偏压对红外光伏探测器Dλ~的影响

Effects of the space charge layer and the bias voltage on d_ λ ~ of infrared photovoltaic detectors

当激发光强较小时，界面空间电荷区的光生电子由于积累的浓度较小而不能隧穿过结界面，这种场助隧穿只有在外场作用下才能发生。

The photogenerated electron can not tunnel the interface when it is illuminated by weak light , unless an external electric field is applied .

空间电荷区和晶界复合对多晶太阳电池基区少数载流子寿命的影响

Influence of carrier recombination in the space charge region and ingrain boundaries on minority carrier lifetime in the base region of polysilicon solar cells

实验结果表明，辐照电场的存在将造成缺陷在空间电荷区的不均匀分布。

Experiment results show that the application of an electric field causes nonuniform distribution of the density of the defects in the space charge region .

采用一维非平衡等离子体模型讨论了阴极区的等离子体性质，阴极区被分为电离区和空间电荷区。

The properties of the cathode fall region are discussed by applying one dimensional model of non equilibrium plasma region adjacent to an electric arc cathode .

本文报道了一种能同时确定半导体体内少子复合寿命和半导体表层空间电荷区少子产生寿命的实验技术。

This paper presents an experimental technique for determining simultaneously the recombination lifetime of minority carriers in a semiconductor and generation lifetime in the surface space-charge region .

用一新的工艺解析模型求得双掺杂单结型p&n结空间电荷区静态特性的一般理论。

In this paper , the conventional theory of p-n junction space-charge region static characteristic with double doping-single junction type is obtained by the new process analysis model .

将植物细胞膜内部模拟为两个介电常数不同的空间电荷区，建立离子跨膜模型，导出了界面势垒的静电荷密度与界面电导率。

Divided two space-charge regions of different dielectric constant inside plant cell membrane , a model was built for ion transmembrane transport , the charge density and interfacial conductivity was derived from interfacial potential barrier .

基于对半导体表面产生区宽度特点的分析，提出了与表面空间电荷区宽度呈线性关系的产生区宽度新模型。

Based on the analysis of the model of generation width in semiconductor surface , a new model of generation width is presented , which is a linear function of the equilibrium surface space charge region width .

这些带电沙粒形成的空间电荷区对输电线路相间和导线对杆塔的空气间隙以及绝缘子表面放电特性产生影响。

The space charge region formed by the sand dust charged particles have effect on the discharge characteristics of the insulators surface and the air gap between the transmission line phase to phase and the wire to the tower .