肖特基势垒

LaB6/GaAs肖特基势垒研究

The Research of LaB _6 / GaAs Schottky Barrier

同时，稀土金属硅化物具有较高的电导率，在N型硅上有低的肖特基势垒，而在P型硅上有高的肖特基势垒。

Meanwhile , rare earth silicides also have been studied extensively because of their high conductivity , low Schottky barrier height on n-Si and high Schottky barrier height on p-Si .

离子注入α-Si∶H肖特基势垒的研究

An investigation of ionic implantation doped a-si : h Schottky barriers

肖特基势垒理想因子n值直读测量方法

A Measuring Method of Direct-Reading Schottky Ideal Factor n

n沟肖特基势垒隧穿晶体管特性研究

Study of n-Type Schottky Barrier Tunneling Transistor Characterizations

研究了n型Au/GaN肖特基势垒紫外光探测器的电子辐照失效机理。

The electron irradiation-induced failure mechanism of n-type Au / GaN Schottky barrier UV detectors is investigated .

栅极金属是Al，与酞菁铜界面形成肖特基势垒。

The gate metal is Al , which has Schottky barrier interface with copper phthalocyanine .

清晰热成象红外双色肖特基势垒CCD图象传感器

An Infrared Bi Color Schottky Barrier CCD Image Sensor for Precise Thermal Images

氮离子注入对GaAs肖特基势垒性能影响的研究

Effect of Nitrogen Ion Implantation on Characteristics of GaAs Schottky Barriers

研制了三类不同金属和III族氮化物接触的肖特基势垒二极管。

Schottky barrier diodes with different metal on III nitride have been fabricated .

SiC肖特基势垒二极管在PFC电路中的应用

Application of Power Factor Correction Circuits with SiC-Based Schottky Barrier Diode

ZnO肖特基势垒紫外探测器

ZnO Schottky Barrier UV Photo detector

八毫米GaAs梁式引线肖特基势垒混频管

8mm GaAs Beam Lead Schottky Barrier Mixer Diode

512×512元PtSi肖特基势垒IRCCD图像传感器

512 × 512 Element PtSi Schottky-barrier IR CCD Image Sensor

根据肖特基势垒的反向IV曲线，计算了势垒的反向饱和电流密度和平均理想因子。

We have calculated the saturation current density and ideality factor of the Schottky barrier with reverse characteristics .

Ni（Zr）Si薄膜热稳定性及其肖特基势垒二极管的电学特性

Investigation On Thermal Stability of Ni ( Zr ) Si Thin Film and Electrical Characteristics of Its Schottky Barrier Diode

本论文研究由金属与C（60）富勒烯材料形成的肖特基势垒接触二极管。

In this thesis , we aimed our research at metal-C_ ( 60 ) Fullerene Schottky barrier contact , which is the typical structure of C_ ( 60 ) diodes .

膜的可蚀性及肖特基势垒的热稳定性能够满足自对准栅IC的要求。

The etched ability of the films and the high temperature stability of the Schottky barrier satisfy the requirements of SAG ICs .

我们基于高阻的低缺陷密度同质外延GaN材料首次制作了具有双工作模式的肖特基势垒型紫外探测器。

We demonstrate a dual-operation-mode UV Schottky-barrier PD fabricated on high-resistivity GaN homoepitaxial layer with low defect density .

作者予言，掺入金属元素使a-Si∶H半金属化，可望进一步降低肖特基势垒高度。

It is predicted that the Schottky barrier heights can be largely decreased by doping metal elements to alloy a-Si : H.

用于肖特基势垒红外传感器的Ir及IrSi膜

Iridium and Iridium Silicide Films for Schottky Barrier Infrared Sensors

MESFET肖特基势垒结参数提取及I-V曲线拟合

Parameter Extraction and I-V Curve Simulation of the MESFET 's Schottky Junction

本文提出了一种新型SiC金属氧化物半导体场效应晶体管（MOSFET）结构&SiC肖特基势垒源漏MOSFET。

A novel SiC Schottky Barrier Source / Drain Metal-Oxide-Semiconductor Field-Effect Transistor ( SiC SBSD-MOSFET ) is proposed in this dissertation .

证实了GaN肖特基势垒光敏器件的辐照失效与界面态有关，而不是由GaN体材料中的缺陷导致的。

The reason that the irradiation induced failure of GaN devices was due to the damage of Au / GaN Schottky interface .

类比ZnO压敏材料的晶界势垒模型，提出了适合TiO2压敏材料的肖特基势垒模型。

By analogizing to the grain boundary defects model for ZnO varistors , a Schottky potential barriers model for TiO2 based ceramics for varistors is introduced .

4H-SiC肖特基势垒二极管伏-安特性的解析模型

Analytical model for I-V characteristics of 4H-SiC Schottky barrier diodes

InAs量子点在肖特基势垒二极管输运特性中的影响

The influence of InAs quantum dots on the transport properties of Schottky diode

Ag与p-InP的肖特基势垒特性

Schottky-Barrier Properties of Ag on p-InP

高频C-V法在肖特基势垒接触退化失效分析中的应用

Application of the High Frequency C-V Method in the Failure Analysis of Schottky Barrier Contact Degradation

在常温下，Pt／TiO2界面处的电子电导对Pt／TiO2肖特基势垒高度的变化非常敏感。

At room temperature , the electronic conductivity across the Pt / TiO 2 interface leads to be extremely sensitive to the height of Schottky barrier .