驱动能力

NMOS管相对于PMOS管速度更快，有更高的电流驱动能力和高的跨导，在本设计中作为倒梯形R-2R电阻网络中各支路的电流开关。

NMOS is used as current switch , which has faster speed compare with PMOS and has high current drive capability and gm.

在3.5A的峰值驱动能力，使这部分驾驶时一个很好的选择高电容负载。

The3.5A peak drive capability makes this part an excellent choice when driving high capacitance loads .

一种新型低压高电流驱动能力的CMOS电流传输器

Low Voltage and High Current-Driving Capability CMOS Current Conveyor

利用DLL扩展VISUALFOXPRO硬件驱动能力

Expand the Driving Ability of Hardware for Visual FoxPro by Using DLL

一种能够提高驱动能力和ESD保护能力的亚微米CMOS输出晶体管的新设计方法

New Layout Design for Submicron CMOS Output Transistors to Improve Driving Capability and ESD Robustness

同时运用ClassAB推挽电路作输出级，获得高驱动能力和低谐波失真。

Meanwhile , a class AB output stage is also developed to ensure large dynamic range , strong driving capability and low harmonic distortion .

而对于LObuffer模块而言，其重要的考量，则是足够大的驱动能力，足够小的功率消耗与足够好的噪声表现。

And for LO buffer , important performance will focus on the good driving capability , low power consumption and good noise performance .

输出级采用推挽式AB类结构，能有效地提高输出电压的摆幅，从而得到电路在低电源电压下的高驱动能力。

The output swing can be improved efficiently with push-pull class-AB output stage , thus high-drive capability with low power supply is obtained .

电流舵DAC由于其结构本征的高速特性和较好的驱动能力，被广泛应用在高速高精度领域。

The current-steering DAC is widely used in high-speed and high-resolution fields because of its intrinsic high speed and driving capability .

由于芯片自带功率MOS管驱动能力，简化驱动电路设计的同时提高了控制器的可靠性。

The drive circuit of power MOSFETs is simplified and the stabilization of the controller is enhanced attributed to the drive capability of this chip .

用SPICEⅡ对设计电路的计算机模拟表明，具有推挽输出结构的三值TTL电路具有较强的驱动能力及较快的工作速度。

Computer simulation of the circuits designed with SPICE ⅱ shows that the ternary TTL circuits with push-pull output construction have better driving ability .

在此基础上，从通信速率要求、驱动能力、信噪比多方面对系统的外围电路的实现进行了详细的讨论，最终完成了整个系统的硬件电路设计以及PCB绘制。

Then , the realization of the peripheral circuit in terms of communication rate , driving capability and SNR is discussed . After designing hardware circuit , the PCB was drawed .

采用PZT作为基体材料，通过化学还原的方法制备了具有大位移驱动能力的复合结构型压电陶瓷。

A new kind of ( large-displacement ) piezoelectric ceramics for actuators composed of reduced and un - ( reduced ) layers was prepared from PZT by chemical reduction .

主要研究了COG图形型液晶显示模块的的深竖条显示问题，提出了一个如何提高IC驱动能力的方法。

The paper studies on the vertical bar in display of the COG graphic LCM , and it bring forward a resovent about how to increasing the drive ability of IC .

主要从功耗电流和IC的驱动能力两个方面初步探讨了功耗电流和IC驱动能力是造成显示竖条的主要原因并提出了解决的方法。

The paper studies on the vertical bar in display of the matrix COG LCM , and it 's found that the main causes are consumption current and drive ability of IC . Several methods of avoiding the effect are introduced .

其硬件部分主要包括控制器与副油箱，控制器的主控芯片采用具有低功耗、稳定性好、驱动能力强等优点的PIC单片机。

Hardware components include controller and auxiliary tank . PIC microprocessor is chosen as the main control chip which has such features as low-power , high - stability and strong driving ability and so on .

该电荷泵结构既有四相位Dickson的高驱动能力，又有倍压器高电压增益、高转换效率的特点。

The structure of the charge pump has both high-drive capability of four-phase dickson charge pump and high voltage gain , high conversion efficiency characteristics of doubler .

BCD工艺是将DMOS与低压BiCMOS工艺结合起来的一种新型工艺，具有功耗低、集成度高、驱动能力强等优点。

BCD process is a novel one that combines DMOS and low voltage BiCMOS process together ; its advantages are low power dissipation , high integrity and strong drive .

系统报警模块采用了先进的32位ARM处理器与μC/OS-Ⅱ实时操作系统，而采集模块则使用了抗干扰能力强，驱动能力强8位PIC系列芯片。

The system reported to the police the module to use the advanced 32 ARM processor and μ C / OS - ⅱ real-time operating system , but acquisition the module then has used antijamming ability , driving force strong 8 PIC series chip .

仿真结果显示硅膜厚度对SOI槽栅MOS器件的阈值电压、亚阈值特性和饱和驱动能力都有较大影响，选择最佳的硅膜厚度是获得较好的器件特性的重要因素。

The thin film thickness of SOI Groove gate MOS devices affects the threshold voltage , sub-threshold slope and saturation driving current severely . So , it 's a very important factor for good device characteristics to optimize the thin film thickness .

使用专门设计的LDMOS高压器件，实现了一个具有高压驱动能力（±150V）和大增益（>80dB）的CMOS运算放大器。

A CMOS operational amplifier ( OPA ) is implemented with specifically designed high-voltage LDMOS , which achieves high voltage driving capability (± 150 V ) and high gain ( > 80 dB ) .

系统比较了几种不同栅结构短沟道SOIMOSFET的性能，包括短沟道效应、电流驱动能力、器件尺寸等特性，获得了栅的数目与短沟道SOI器件的性能成正比的结论。

Performances of short-channel SOI MOSFET 's with different gate-structures are compared systematically , including short-channel effects , current-drive ability and device scaling . It is concluded that the performance of short-channel SOI MOSFET 's is proportional to the number of gates .

工艺和性能分析表明，它可抑制SOI结构的浮体效应和自加热效应，具有低的泄漏电流，以及高的电流驱动能力。

In comparison to the partially-depleted SOI counterpart , the floating body effect and self-heating effect are distinctly suppressed . Furthermore , the advantage of SOI structure 's low leakage current do not degrade , and the current driving capability is high .

针对系统目标，采用了一种交叉耦合的全PMOS结构的新型升压单元，并通过多级系统的建模分析了系统的电流驱动能力和系统效率，建立了一个三级的开关电容变换器系统。

To meet the demands of the system , a cross-coupled full PMOS structure of step-up unit was introduced . And through modeling the multi-stage system , the current driver capacity and efficiency of the system was analyzed .

因此，DH-PHEMT器件具有更好的线性度，在较大的栅压范围内具有高的跨导和更大的电流驱动能力。

A high device linearity , high transconductance over a large gate voltage swing , high current drivability are found in DH-PHEMT .

此门阵列采用的BFL预功能级标准逻辑单元，具有九种组合逻辑功能及两种不同选择的驱动能力，并具有输出电平调节功能。

The pre-functional cell of standard buffered FET logic ( BFL ) adopted by the gate array possesses nine logic functions , two different kinds of driving capabilities , and the level control ability .

本文分析了传统的以耗尽型晶体管作负载的多值NMOS电路工作速度低及驱动能力差的原因，并根据NMOS晶体管对信号的传输特性提出了三值NMOS电路输出级的改进设计。

This paper analyses the cause that the traditional multiple-valued NMOS circuits with depletion N-MOSFET as load have low speed and low driving power . An improved design of ternary NMOS output circuit is proposed based on the signal transmission characteristics of the N-MOSFET .

相对于传统仪表，它具有功耗低、线性度好、测量精度高、测量范围宽、可靠性好等优点。控制器的主控芯片采用具有低功耗、稳定性好、驱动能力强等优点的MSP430系列单片机。

The benefits of this type of flow meter include high accuracy , good linearity , wide measuring range , good anti-vibration and excellent reliability.MSP430 microprocessor is chosen as the main control chip which has such features as low-power , high - stability and strong driving ability and so on .

全差分低电压、高驱动能力运算放大器的实现

Realization of Fully Differential Low Voltage and High Drive Operational Amplifier

油藏天然驱动能力的早期评价

An early evaluation of the drive mechanism of an oil reservoir