光电子材料

半导体量子结构和Si基光电子材料设计的新进展

Recent Development in Semiconductor Quantum Structures and Design of Si-Based Optoelectronic Materials

评述近年来在半导体量子结构电子态理论应用于Si基光电子材料设计方面的重要进展。

The important developments in electronic structure theory of semiconductor quantum structure and its application for designing Si based optoelectronic materials are reviewed .

ZnO材料无论是在晶格结构，晶格常数还是在禁带宽度上都与GaN很相似，对衬底没有苛刻的要求而且很易成膜，被认为是很有前途的光电子材料。

The crystal structure and lattice constant of ZnO are similar to those of GaN .

氧化锌（ZnO）晶体材料作为最重要的光电子材料之一在当今高科技领域日益受到重视。

Zinc oxide ( ZnO ) crystal is one of the most important photoelectric materials at the present time .

光电子材料InP玷污的研究

Study on Pollution for the Photoelectronic Material InP

光电子材料InP与金属接触的物理特性研究

Characteristic Analyses for InP Contacted with Metals

ZnO是一种有多种应用前景的光电子材料，它在压电式转换器、表面声波器件、光波导管、变阻器、透明导电氧化物、自旋功能器件和紫外光发射器等器件中具有广泛的应用。

ZnO is a multiple applications of optoelectronic materials , It has wide application in piezoelectric transducers , transparent conductive oxides , sensors , spin functional devices , and UV-light emitters etc. .

作为电子材料和光电子材料，cBN具有广阔的应用前景，所以在材料的制备、物理性质的研究及应用等方面受到人们的极大关注。

As electrical or optoelectronic material , cBN has extensive applications . So , many researchers are interested in the synthesis , physical properties and application of cBN .

文章给出了光电子材料InP的（100）和（111）晶面质谱分析的结果，对（100）晶面做了光荧光分析。

The mass spectrum analysis of crystal face ( 100 ) and ( 111 ) and the photoluminescence analysis of crystal face ( 100 ) in the photoelectronic material InP were given .

InN和GaN是宽禁带半导体中最重要的光电子材料，但现在还存在一些技术上的困难阻碍了它们的研究进展，其中一个重要的问题就是缺少合适的衬底材料。

InN and GaN are the most important optoelectronic materials of wide band gap semiconductors now . But there were still some difficulties hinder research progress , and one of which was absence of acceptable substrates to InN film .

由于AES具有很高的空间分辨率和表面灵敏度，并可以通过离子束溅射刻蚀获得组分深度剖面分布，所以它在各种材料，特别是微电子材料、光电子材料和纳米薄膜材料的分析中应用广泛。

Thanks to its high space-resolution , surface sensitivity and capability of obtaining composition - profile by ion sputtering etching , AES is widely used in the analysis on various materials , especially optoelectronic materials and nanometer thin film materials .

近年来，尽管GaN基光电子材料和器件得到迅猛发展，但对材料本身的研究还很不充分，GaN基材料生长和性能研究方面还需做大量工作，仍存在一些影响产业化的问题急需解决。

In recent years , GaN-based optoelectronic materials and devices have been rapidly developed , however , there has not full studied in GaN thin films . Many theoretical and experimental studies should be focused on the GaN-based materials and properties , especially these problems affected industrialization .

由于ZnO是直接带隙宽禁带（3.37eV）半导体并具有较大的激子束缚能（60meV），因此也是一种很有前景的光电子材料，有可能应用于发光二极管和激光二极管等。

Furthermore , ZnO is considered as a promising optoelectronic material with potential applications in light emitting diodes and laser diodes due to its wide direct bandgap ( 3.37eV ) and large exciton binding energy ( 60meV ) .

β－FeSi2／SIMOX&一种新结构的光电子材料

β - FeSi_2 / SIMOX ── A Novel Structure Optoelectronic Material

光电子材料钽酸锂晶片化学机械抛光过程研究

Study on Chemical Mechanical Polishing of Tantalum Lithium Crystal Wafer

硅基半导体光电子材料的第一性原理设计

An ab initio Computational Design of Si-based Optoelectronic Materials

红外光电子材料碲镉汞异质外延结构理论研究

The Theoretical Study of the Hetero-epitaxial Growth for the Infrared Optoelectronic Material HgCdTe

含硼光电子材料的第一性原理计算及实验研究

First-Principles Calculation and Experimental Study on Boron-Incorporated Optoelectronic Materials

半导体光电子材料中的缺陷

Defects in Optoelectronic Materials

半导体纳米微晶掺杂滤光玻璃由于具有优异光学性质，近年来已成为光电子材料科学与技术关注的焦点之一。

Glass doped with semiconductor nano crystallites has been the focus of the photoelectron material science and technology for novel optical characteristics .

半导体微纳结构材料以其独特的光电特性逐渐成为新一代光电子材料与器件的基础。

The semiconductor microstructure materials became an essential part of the new generation optoelectronics devices and materials gradually due to its unique photoelectric properties .

介绍了非线性光学和微光学玻璃两类光电子材料的制备、特性及应用领域。

This paper presented a brief review of the preparations , properties and applications of the optoelectronic glasses which consist of nonlinear and micro optical glasses .

本文结合信息技术的进步来考察电子材料、光电子材料和光子材料中人工晶体的发展。

This paper reviews the development of synthetic crystals in the fields of electronic , opto electronic and photonic materials with respect to the progress of IT .

作为一种重要的稀土材料，氧化铈在催化、传感、光电子材料等领域有着广泛的应用。

As one of the most important rear-earth compounds , ceria has wide application in many fields , such as catalyze , sensor , photoelectricity and so on .

此项研究不仅为聚合物/有机、无机复合纳米材料的设计合成以及一维光电材料组装成纤维器件提供了实践上的依据，而且推进了聚合物复合光电子材料的实用化进程。

This research not only enriched the synthesis methods for inorganic , organic and polymer composite materials and assemble of 1D nano optoelectric device , but also promoted practicality course of polymer composite optoelectric material .

本文概述了功能晶体材料从天然晶体到人工晶体，从电子材料到光电子材料的发展历程，并着重探讨了今后的发展动向。

This review describes the development of functional crystal materials from natural crystals to synthetic crystals , as well as from electronic materials to opto-electronic materials . Its development trend is also discussed in detail .

介绍了国内外信息功能材料目前的研发水平、器件应用概况和发展趋势，主要介绍了半导体材料，也涉及到信息存储材料、有机光电子材料和人工晶体材料等。

The current status and future prospects of research and development for functional information materials and its related devices are introduced in this paper , in which stress mainly on semiconductor materials , but information storage materials , organic opto-electronic materials and artificial crystal materials etc are also briefly discussed .

光电子信息材料的发展浅述

Development of opto - electronic material

光电子晶体材料与器件在科技、军事、先进制造等领域发挥日益重要的作用。

Photo-electronic crystal materials and apparatus have been playing an increasingly important role in the fields of science and technology , military affairs and advanced manufacture .

碲镉汞是一种重要的红外光电子探测器材料，其禁带宽度在0～1.65eV范围内连续可调，基于碲镉汞材料的红外探测器可覆盖整个红外大气窗口。

HgCdTe is an important material for infrared electronic detector . HgCdTe-based infrared detector can cover the whole infrared atmospheric window due to its band-gap can vary continuously in the range of 0 1.65 eV .