发射极

对Ⅲ-Ⅴ族化合物HBT模型本征集电极和发射极电流方程进行了改进，加强了模型的拟合能力。

Novel equations in terms of the current of the intrinsic collector and emitter are implemented to improve the fitting ability of a ⅲ - ⅴ compound HBT model .

多晶硅发射极晶体管（PET）Gummel－Poon模型

Gummel-Poon Model for Polysilicon Emitter Bipolar Transistor

晶体管发射极势垒电容C（Te）的测试及数据处理

Test and Data Processing of Emitter Junction Barrier Capacitance C Te of Transistor

少子MIS隧道结发射极晶体管场感应结模型

The model of field induced junction on minority carrier MIS tunnel junction emitter transistor

发射极空气桥InGaP/GaAsHBT的DC和RF特性分析

Analysis of DC and RF Characterizations of InGaP / GaAs HBT with Emitter Air-Bridge Interconnection

GaN基蓝光发光二极管正向电压温度特性研究发射极基极二极管

Temperature characteristics of the forward voltage of GaN based blue light emitting diodes

超高速VLSI中多晶硅发射极晶体管串联电阻的测量

Measurement of Series Resistances in Polysilicon Emitter Bipolar Transistors for High Speed VLSI

发射极条宽为3微米时，fγ>3GHz。该工艺已应用于超高速双极ECL分频器中。

This technology has been applied to very high speed bipolar ECL frequency dividers .

低电压高效率非晶硅发射极异质结UHF功率晶体管

Low Voltage High Efficient Amorphous-Si Emitter Heterojunction UHF Power Transistors

本文研究面结合型晶体管共发射极线路的小讯号h参数与自然等效线路中元件的关系。

In this paper the relationships between small-signal h-parameters and elements of the natural equivalent circuit of the common emitter configuration of junction transistors are studied .

本文提出了一种三指发射极HBT的设计。

A novel-layout HBT that employs a three-finger emitter is demonstrated .

73GHz磷掺杂多晶硅发射极自对准SiGe基区双极晶体管

73-GHz Self-Aligned SiGe-Base Bipolar Transistors With Phosphorus-Doped Polysilicon Emitters

SiGeHBT发射极延迟时间模型

An Emitter Delay Time Model of an SiGe HBT

InP／InGaAsP异质结双极晶体管发射极条长及基区宽度的选择

The Choosing of Emitter Length and Base Width of InP / InGaAsP HBT

发射极镇流电阻对In（0.49）Ga（0.51）P/GaAsHBT特性的影响

Effect of Emitter Ballasting Resistor on In_ ( 0.49 ) Ga_ ( 0.51 ) P / GaAs HBT Characteristics

多发射极条功率SiGeHBT的热电耦合与优化设计

Electrical-Thermal Couple and Optimization Design of Power Si / SiGe HBT 's with Multi-Finger Emitter Stripes

利用自洽迭代数值计算方法，对多发射极微波功率SiGeHBT芯片热电耦合特性进行了模拟和分析。

Electrical-thermal couple effect of multi-emitter microwave power SiGe HBT is numerically studied ( using ) self-consistency iterative method .

氮化硅不仅具有折射率高、膜致密、能抵挡水汽和外来杂质对电池的破坏等优点，而且沉积过程中产生的H等离子体可以对电池发射极进行二次钝化降低界面复合率。

Silicon nitride has high refractive index and can keep the solar cell from destruction of water vapor and impurity . The hydrogen plasma can passivate emission layer during deposition and lower interface recombination rate .

不同发射极面积npn晶体管高低剂量率辐射损伤特性

Characteristics of high-and low-dose-rate damage for domestic npn transistors of various emitter areas

该系统由一个SiC发射极、一个简单的9层绝缘过滤器和一个GaSb光电池环路组成。

The system is made of a SiC emitter , a simple 9 layer dielectric filter and a GaSb Photovoltaic cell array .

本文在对发射极开关晶闸管EST（EmitterSwitchedThyristor）正向特性二维数值分析的基础上，提出了EST正向工作时的五个区域。

Based on the two dimensional simulations , the partitioned five regions of the forward I-V characteristics for Emitter-Switched Thyristor ( EST ) have been proposed .

研究工作得到的结论对国内用CVD方法制备热离子能量转换器发射极W涂层材料、发射极表面用电解蚀刻工艺制备高分额的{110}晶面等都具有重要的参考价值。

The results gained in this paper are useful to the fabrications of CVD thermionic energy converter 's tungsten emitter and the processing of etching { 110 } plans .

发射极关断晶闸管（ETO）是满足高性能电能变换技术要求的新型大功率电力电子器件。

The Emitter Turn-off ( ETO ) thyristor is one of the novel high power devices .

超宽带（UWB）技术的特点是利用在时域发射极窄（ns级）脉冲，相应地在频域产生超宽的频带（高达几GHz）来传输信息。

Ultra-Wideband technology makes use of ultra-short duration ( < 1ns ) pulses , which yield ultra-wide bandwidth ( up to several GHz ) to transmit signals .

频率、基极电流、集电极电流、发射极几何尺寸（面积、条长）、Ge组份x、温度等诸多因素都对低频噪声有影响。

Many factors , such as frequency , base current , collector current , geometry size ( emitter area and length ), Ge fraction and temperature , will have influence on low-frequency noise characteristics .

利用多晶硅发射极技术与分子束外延生长SiGe基区技术相结合，研制成适于集成的平面结构、发射结面积为3μm×8μm的SiGe异质结双极晶体管（HBT）。

A planar SiGe heterojunction bipolar transistor was fabricated using polysilicon emitter technology and SiGe base grown by Molecular Beam Epitaxy ( MBE ) .

经比较得出，选择性发射极太阳电池组件使用密封剂silicone封装可提高其短波响应，即提高了量子效率。

By comparison , it is concluded that , using silicone can improve blue response of selective emitter solar cell module . In another word , using silicone can improve the quantum efficiency of module .

由于FFJ的发射极-基极结电容仅仅取决于它的发射极掺杂情况，因此，可以同时得到较小的基极电阻rb和较高的发射极截止频率f（TE）。

The emitter-base junction capacitance of the FFJ is only decided by it 's emitter doping profiles , so that both smaller base resistance rb and higher emitter cutoff frequency can simultaneously be obtained .

TiSi2的形成及其在浅结多晶硅发射极工艺中的应用

The Formation of TiSi_2 and Its Application to Shallow Junction Poly-Si Emitter Process

采用简单的双台面工艺制作了完全平面结构的2个单元4个发射极指的SiGeHBT。

A multi-finger structure power SiGe HBT device ( with an emitter area of about 166 μ m2 ) is fabricated with very simple 2 μ m double-mesa technology .