基极

jī jí
  • Base electrode;basic electrode
基极基极
基极 [jī jí]
  • [base electrode] 由晶体管基区引出的电极

  1. 在双极型晶体管EM2模型参数中引入的基极电阻r'b是重要的也是较难测量的参数之一。

    The ohmic base resistance of bipolar transistor introduced in EM_2 Model is a very important parameter .

  2. GaN基蓝光发光二极管正向电压温度特性研究发射极基极二极管

    Temperature characteristics of the forward voltage of GaN based blue light emitting diodes

  3. 本文介绍了一种对PWM逆变器中晶体管基极驱动开路故障的检测和隔离的方法。

    This paper presents a method of detection and isolation on a pulsewidth modulation inverter supplying a asynchronous machine .

  4. PNP型HBT基极接触阻抗的理论估算

    Theoretical Calculation of Base Contact Impedance of PNP Type HBT

  5. 本文针对基极电阻随电流变化的实验事实,根据基区电导调制效应,提出了工作在大电流密度水平时,基极电阻RB(IB)的理论模型;

    A theoretical model is presented to determine the current dependence of base resistance RB ( IB ) of bipolar transistor at high current , based on the effect of base conductivity modulation .

  6. 本文介绍了为异步电动机PWM变频调速系统而研制的GTR基极驱动电路。

    In this paper GTR Base-drive circuits on PWM variable frequency and variable speed systems for induction motor drive are studied .

  7. 同时,基极串联电阻Rb将会减弱器件的抗微波损伤能力。

    Moreover , the series resistance at the base resistance Rb will weaken the capability of the device to withstand microwave damage .

  8. 提出了一种新的适合于低精度直流调速的H型PWM变换器功率晶体管基极驱动方式,采用PWM方式成功实现了对机器人行走电机的速度控制。

    We bring forward a new base-poll driving method for gigantic transistors in H-type PWM converter and by adopting PWM method , successfully complete rotate speed controlling for the walking electromotor .

  9. 器件结构是双基极、双集电极npn晶体管。

    The device is constructed with a double base , double collector npn transistor .

  10. 提出一种基于DC/DC变换器IC大功率晶体管模块的基极驱动电路,减小了驱动损耗,简化了驱动电路与工艺。

    A base drive circuit based on IC high power transistor module of DC / DC converter is presented , which reduces drive consumption , also simplifies drive circuit and the technics .

  11. 频率、基极电流、集电极电流、发射极几何尺寸(面积、条长)、Ge组份x、温度等诸多因素都对低频噪声有影响。

    Many factors , such as frequency , base current , collector current , geometry size ( emitter area and length ), Ge fraction and temperature , will have influence on low-frequency noise characteristics .

  12. 本文介绍为航空静止变流器中的直流变换器而研制的GTR基极驱动电路。

    This paper describes a new base drive circuit for GTRs in DC / DC converter of the aeronautical engineering .

  13. 由于IGBT中含有宽基极、低增益的晶体管,因此采用双极性传输方程来描述IGBT电流,以此作为模型的物理基础。

    Because the structure of IGBT includes a wide base , low gain BJT , use a bipolar transport equation to describe the current of IGBT as the physics base .

  14. 与普通硅衬底相比,采用绝缘型衬底制备SiGeHBT可以获得较高的基极-集电极击穿电压,较高的厄利电压和最大震荡频率。

    As compared to bulk SiGe-HBT , SiGe HBT on the isolated type substrate have a higher Early voltage , maximum oscillation frequency , and breakdown voltage .

  15. 由于FFJ的发射极-基极结电容仅仅取决于它的发射极掺杂情况,因此,可以同时得到较小的基极电阻rb和较高的发射极截止频率f(TE)。

    The emitter-base junction capacitance of the FFJ is only decided by it 's emitter doping profiles , so that both smaller base resistance rb and higher emitter cutoff frequency can simultaneously be obtained .

  16. 基于0.35μmSiGeBiCMOS工艺,设计了共基极和共发共基两种输入结构的前置放大器。

    Based on a 0.35 μ m SiGe BiCMOS technology , two types of preamplifier were designed by using common-base and common-emitter plus common-base input stage respectively .

  17. 给出了非合金接触情况下,PNP型HBT基极比接触电阻和接触阻抗的解析计算方法和结果。

    In this paper , we proposed a theoretical method and results for calculating special contact resistance and contact impedance of base contact of a PNP type HBT .

  18. 主要介绍静电感应晶体管、电荷调制器件、体电荷调制器件、基极存储图象传感器、增强MOS图象、CMOS等有源象素图象传感器的新进展。

    In the paper the recent development of static induction transistor , charge modulation devices , buck charge modulated device , base stored image sensor , amplified MOS image and CMOS active pixel sensors are emphatically described .

  19. 计及基极电流非理想因子n的影响,引入了禁带宽度视在变窄量△E(8a)的概念,提出了描述h(FE)温度特性的理论模型。

    Taking into account the effect of non-ideal factor n in the medium current range a concept of the " apparent amount of bandgap narrowing " is introduced and a theoretical model of the current gain hFE temperature dependence is presented .

  20. 本文从包括埋层影响的集区杂质分布出发,求出了寄生PNP晶体管的共基极电流放大系数。

    We try to obtain the common-base current gain a of the parasitic PNP transistor from the eloping profile of the collector region including the effect of buried-layer .

  21. 当开环情况发生时,Q3通过射-基极连接隔离整个回路电流,而通过680Ω电阻接到运放。

    When an open-loop condition occurs , Q3 shunts the entire loop current back through its emitter-base junction and through the680 Ω resistor to the op amp .

  22. 选用自偏置电流源为cascode增益结构提供基极偏置电流,并根据ADS仿真出的基极电流IB与最小噪声系数NF的关系曲线,确定使NF较小的偏置电流。

    The self-bias current source is selected to provide the base biascurrent of cascode gain structure . According to IB-NF curve in ADS simulation , the bias current is determined to achieve the lower noise figure .

  23. 该薄膜磁阻系数ΔR/R≥9%,全金属自旋晶体管试样集电极电流变化MC>587%(常温),且其性能随基极Ag层厚度减小而增强。

    It 's coefficient of magneto-resistance is Δ R / R ≥ 9 % , the coefficient of collector current amplify is MC > 587 % ( in room temperature ) . The properties of spin transistor increase as the base thickness decreasing .

  24. 基于非选择性外延,基极/发射极自对准和集电区选择性注入,提出了一种可用于1.5μmSiGeBiCMOS集成的HBT器件结构及其制作流程。

    Based on the non-selective epitaxy , self-aligned base / emitter and selective implanted collector , a kind of SiGe HBT structure for 1.5 μ m BiCMOS integration and corresponding process flow is presented .

  25. 本文功率放大器设计的创新点在于:1.基极稳定电阻采用每一只HBT与一个电阻串联的结构,电阻值大小适宜,减小了工艺误差对功率放大器性能的影响。

    A new structure of base stability resistor is used , which each HBT is in series with a base stability resistor . The resistors have appropriate resistance that reducing the influence of the process error . 2 .

  26. 对共基极YIG调谐振荡器的起振条件,在简化假定下作了讨论,求出最大可调频宽时基极电感最佳值。

    Under a simple hypothesis , the conditions of oscillation for the common base YIG-tuned oscillator are discussed , and the optimal inductance of the base is found when the tuned band-width is the maximum .

  27. 当ILOAD超过最大允许值时发生过载情况,R6上的电压增大导致基极-发射极电压足够大到导通Q2。

    In the event of an overload when ILOAD exceeds its maximum permissible value , the increase in voltage across R6 results in sufficient base-emitter voltage to turn on Q2 .

  28. 与通常晶体管相比,FFJ的有效发射极面积对基极面积之比值提高2~3倍,输出功率-阻抗乘积提高5~10倍。

    The ratio of effectual emitter area to base area of a FFJ is2-3 times greater than a usual transistor and the output power-impedance product is5-10 times greater .

  29. Zr-4合金板在a相高温区轧制时,{10`11}`2113和{11`21}`2113锥面滑移是主要的形变系统,所以轧制后形成基极取向集中于轧面法向的织构。

    When Zircaloy-4 plate is rolled at high a tempera-ture , { 10 ` 11 } ` 2113 and { 11 ` 21 } ` 2113 slips are the basic deformation systems , thus the operations of them make basal pole orientate along the normal direction of plate .

  30. 共基极放大器频率响应的研究

    A Study of the Frequency Response of the Common Base Amplifier