基底温度

基底温度等因素对薄膜生长影响的MonteCarlo模拟研究

Study Effect of Substrate Temperature to Thin Film Growth by Monte Carlo Simulation

XRD测试样品峰的强度随基底温度升高明显增强。

The strength of the sample tested by XRD increases with the substrate temperature increasing .

离子束流密度和基底温度对TiN纳米薄膜性能的影响

Effect of Ion Beam Flux Density and the Temperature of Substrate on Properties of the TiN Nano-films

采用电子束蒸发沉积制备了不同基底温度的ZrO2单层薄膜。

In this paper , ZrO_2 films were deposited at different substrate temperature by electron beam evaporation .

随着基底温度的升高，（002）衍射峰的FWHM逐渐减小，沉积的Er3+/Yb3+掺杂的ZnO薄膜具有高度C轴择优曲向。

With the increase of the substrate temperature , the FWHM of ( 002 ) diffraction peak decreased , Er3 + / Yb3 + doped ZnO thin films with a strong c-axis orientation .

大多数研究者都关注于在200～400℃的基底温度下制备多晶ITO薄膜，研究其工艺，优化其光学和电学性质。

Most researchers focus on the preparation of polycrystalline ITO thin films with the substrate temperature at 200400 ℃, to study the process and optimize their optical and electrical properties .

论文的主要内容如下：采用X射线衍射分析了不同基底温度下制得的薄膜的结构和结晶情况，结果表明，沉膜时的基底温度对薄膜的结晶特性有重要影响。

The main contents of this paper are as follows : The structural and crystal quality of deposited the thin films were studied by XRD , the results demonstrate that the temperature of substrate on the structural have an important effect on crystal quality of films .

在ALD沉积过程中脉冲调制射频等离子体的放电曲线也做了分析，这对基底温度的调节和减少系统功耗很重要。

The discharge curves are also recorded and analyzed during the deposition processes , which are very important for the regulation of substrate temperature and reducing of plasma power consumption .

基底温度在室温条件时，靶基距的高低对GZO薄膜电阻率影响较大。

If substrate temperature was at room temperature , the target substrate distance would have great influence to the resistivity of GZO films .

基底温度对YbF3薄膜缺陷和光学性能影响研究

Study on the influence of substance temperature on the defect and optical performance of single YbF_3 films

确定最佳工艺参数：溅射压强为5Pa，射频功率为210W，基底温度为300℃。

Sputtering pressure of 5 Pa , RF power of 210 W and substrate temperature of 300 ℃ were identified as the best technical parameters .

研究中采用脉冲磁控反应溅射方法，通过精确地控制氧分压、基底温度等关键工艺参量，在石英玻璃和硅片上制备V2O5薄膜。

Vanadium pentoxide ( V 2O 5 ) thin films were grown onto quartz glass and silicon substrates by pulsed magnetron reactive sputter technique while sputtering power and oxygen partial pressure and substrate temperature are controlled accurately during experiment .

采用柱状靶多弧直流磁控溅射法，100℃基底温度下在玻璃衬底上制备了纳米氮化铜（Cu3N）薄膜。

Copper nitride ( Cu 3N ) thin films with nano-crystalline were deposited on glass substrates at a temperature of 100 ℃ by DC magnetron sputtering with a columnar target .

研究表明，ZWO多晶薄膜的电学与光学特性与掺杂量、氧分压、基底温度以及溅射电流等制备条件参数密切相关。

The results show that electrical , optical and structure properties of ZWO films depend on sputtering parameters such as oxygen partial pressure , doping content , substrate temperature and sputtering current , etc.

随着基底温度的继续增加，sp~3键含量逐渐下降。

As substrate temperature continuing rising , sp ~ 3 bond proportion gradually decrease .

基底温度对ZnO/Cu/ZnO透明导电膜性能的影响

Influence of Substrate Temperature on Properties of ZnO / Cu / ZnO Transparent Conductive Films

同时进行基底温度对沉积氧化铝薄膜影响研究。

In addition , the different substrate temperature was also concerned with the thin film growth .

且条形岛长度随基底温度的升高、沉积速率的降低而变长。

And the length of the strips increases with the substrate temperature , decreases with flux .

当基底温度为80℃时，薄膜中的sp~3键含量最大。

When substrate temperature is 80 ℃, sp ~ 3 bond proportion of films is the most .

用电子薄膜应力分布测试仪测量了基底温度对Ag-MgF2金属陶瓷薄膜内应力的影响。

This paper has investigated the effect of substrate temperature on the residual stress and microstructure of Ag-MgF_2 cermet films prepared by vapor deposition .

详细研究了氧分压、基底温度和退火温度对成膜结构的影响。

The influences of O 2 partial pressure , substrate temperature and annealing temperature on the structural properties of the films have been studied .

在常规两点增益与补偿校正法基础上，采用偏置校正，可在更宽的基底温度范围内进行非均匀性校正。

Bias correcting method followed by routine gain and compensate two point correcting method will be effective in a wider range of substrate temperature .

讨论了脉冲能量密度、基底温度、气体放电对所沉积薄膜组织结构的影响。

The effect of laser energy density , substrate temperature , and gas discharging on the composition and construction of the films was discussed .

实验发现：此类薄膜的生长速率不再是常数，与基底温度、表面覆盖率密切相关；

It is experimentally found that the growth rate is no constant , and related to both the substrate temperature and the surface coverage fraction .

薄膜的表面形貌受到了基底温度、溅射功率、固体&液体界面性质等因素的复杂影响。

The surface morphology at the micrometer length is very susceptible to the substrate temperature , the incident rf power and the characteristics of solid-liquid interfaces .

制膜时的基底温度升高，薄膜的硬度也会上升，但膜基结合力下降，摩擦系数增大，薄膜的耐磨性下降。

However , with the temperature of Si substrate increasing , the film-substrate bonding strength and wear resistance of the film decrease although its nano-hardness increases .

模拟表明，以上3种因素对薄膜微结构都有一定影响，但基底温度的影响最重要；

The results show that three kinds of factors all have some effect on film microstructure , whereas the effect of the substrate temperature is the most important .

在春季，洞头岛的野外有效温度和基底温度显著大于北麂岛，而两岛北草蜥的体温无显著差异；

In spring , field active body temperatures were not different in spite of the existed significant differences in operative temperatures and substrate temperatures between the lizard populations from two islands .

不同工艺条件下沉积得到的薄膜附着力也不一样，膜厚的增加、基底温度的升高都可能导致薄膜附着力的提高。

Furthermore , the films deposited under different process parameters had various adhesive forces . The force would increase when either the thickness of films or the substrate temperature was increasing .

低辐射薄膜的制备采用脉冲阴极弧放电方法，其主要优点是镀膜过程中基底温度低，而且可以通过控制脉冲宽度与脉冲速度，实现精确控制薄膜厚度。

All Low-E films are deposited by pulsed cathode arc discharge , which has performance of low-substrate temperature . We can change the pulse width and pulse number to control the thickness of films .