等离子体化学气相沉积

与酸腐蚀处理相比，微波等离子体化学气相沉积装置中实现氢－氧等离子体处理方式具有独特的优越性。

Comparing to the acid etching method , the H 2-O 2 plasma pretreatment in MW PCVD device has some unique advantages .

等离子体化学气相沉积TiN膜的刀具试验

Test of cuts with tin film by plasma chemical evaporating deposition

直流等离子体化学气相沉积TiN在塞规上的应用

The Application of DC Plasma CVD of TiN to the Plug Gauge

铝型材挤压模具等离子体化学气相沉积TiN工艺的试验研究

The Experimental Study on PCVD TIN Process for Aluminium Profile Extrusion Dies

等离子体化学气相沉积TiN涂层刀具的应用研究

Application of Cutting Tools Deposited with TiN Film by Plasma Enhanced Chemical Vapour Deposition

定向TiN薄膜的等离子体化学气相沉积

Plasma chemical vapour deposition of oriented tin film

等离子体化学气相沉积参量对Ar等离子体电子特性的影响

Effect of plasma chemical vapor deposition parameters on electron property in Ar plasma

等离子体化学气相沉积非晶SiOx∶H（0≤x≤2.0）薄膜的红外光谱

Plasma-Enhanced Vapor Deposition Amorphous SiO_x ∶ H ( 0 ≤ x ≤ 2.0 ) Films by Infrared Absorption Spectroscopy

等离子体化学气相沉积是一种低温制备TiO2薄膜的有效方法，但通常需要昂贵的真空系统。

Plasma chemical vapor deposition is highly efficient for low-temperature fabrication . However , it is used at low pressure which needs vacuum systems .

用射频等离子体化学气相沉积法（RF-PECVD）制备了含氢类金刚石薄膜（DLC）。

Diamond-like carbon films were prepared by RF-PECVD .

纳米6H-SiC薄膜的等离子体化学气相沉积及其紫外发光

Plasma Enhanced Chemical Vapor Deposition and Ultraviolet Luminescence of Nanocrystalline 6H-SiC Thin Films

探讨了用微波等离子体化学气相沉积法（MPCVD）在Si（100）衬底上加偏压电场和不加偏压电场情况下金刚石膜的成核行为。

The nucleation behaviour of diamond films on Si ( 100 ) substrates is investigated with and without bias field by MPCVD .

以SiH4，Ar和H2为反应气体，采用射频等离子体化学气相沉积方法在300℃下制备了低温多晶Si薄膜。

Low-temperature polycrystalline Si films were fabricated by radio frequency plasma-enhanced chemical vapor deposition using SiH_4 , Ar and H_2 as source gas .

这篇综述介绍了用等离子体化学气相沉积DLC膜的沉积方法、所制备薄膜的性能及应用，最后展望了DLC膜的发展趋势。

This review will describe the deposition methods , properties and some applications of DLC films by Plasma Enhanced Chemical Vapor Deposition .

本文采用低Co硬质合金作为金刚石薄膜的基体材料，用微波等离子体化学气相沉积法（MPCVD）沉积金刚石薄膜。

In the present work , diamond films were deposited on Co-deficient Cemented Tungsten Carbide by microwave plasma chemical vapor deposition ( MPCVD ) .

利用石英钟罩式微波等离子体化学气相沉积（MW－PCVD）实验装置研究了不同沉积气压对金刚石薄膜沉积结果的影响。

The diamond films were deposited in a quartz bell jar type microwave plasma chemical vapour deposition ( MW & PCVD ) research device .

其中一个很重要的应用领域便是微波等离子体化学气相沉积（MPCVD）。

A very important application areas is microwave plasma chemical vapor deposition ( MPCVD ) .

本论文探讨了利用射频等离子体化学气相沉积（RF-PECVD）技术在金属表面制备类金刚石（Diamond-likeCarbon，简称DLC）膜制备。

In this thesis , Diamond-like Carbon ( DLC ) films on metal surface were deposited by radio frequency plasma-enhanced chemical vapor deposition ( RF-PECVD ) .

沉积在Si（100）基片上的CNx膜是用微波等离子体化学气相沉积法（MWPCVD）制备的。

CN x films were deposited on the Si ( 100 ) substrates with microwave plasma CVD method .

在此基础上采用微波等离子体化学气相沉积法，合成了粒径为123～284nm的TiN超细颗粒。

Ultrafine TiN particles with volume diameter of 123 ~ 284 nm are synthesized via microwave CVD process .

在微波等离子体化学气相沉积装置中，采用负偏压形核等方法，研究两种不同的W过渡层/基体结合界面对金刚石薄膜与WC6%Co附着力的影响。

Two different W interlay / substrate bonding interfaces for the adhesion of diamond film deposited on WC-Co substrate were investigated using bias enhancing nucleation method , in microwave plasma enhanced chemical vapor deposition ( MWCVD ) device .

采用低压等离子体化学气相沉积（LPPCVD）并结合反弹盘方法在靶球表面涂敷厚的CxH1-x涂层。

The technical conditions of coating CH film on the polymer micro spherical shell surface are studied by low pressure plasma chemical vapor deposition ( LPP CVD ) .

由SiCl4制备多晶硅的大气压等离子体化学气相沉积及发射光谱诊断

Atmospheric-pressure Plasma Chemical Vapor Deposition for Polycrystalline Silicon Preparation from SiCl_4 and OES Diagnosis

用苯作工作气体，在一个电子回旋共振（ECR）微波等离子体化学气相沉积系统中制备了含氢非晶碳膜（a-C：H）。

Hydrogenated amorphous carbon films ( a C : H ) were prepared in an electron cyclotron resonance plasma chemical vapor deposition system with benzene as a gas source .

采用红外椭圆偏振光谱仪来分析Si衬底上金刚石薄膜的组成和光学性质，研究微波等离子体化学气相沉积法生长条件和退火工艺对金刚石薄膜的消光系数和折射率的影响。

Using infrared spectroscopic ellipsometer ( IRSE ) to analyze the composition and optical properties of the diamond film on Si substrate , the effect of different conditions of deposition process and annealing on the optical properties of the diamond film is studied .

所用样品采用螺旋波等离子体化学气相沉积技术制备，利用Raman散射、红外吸收和光学吸收技术对薄膜的微观结构、氢的键合特征以及能带结构特性进行了分析。

The samples were prepared by helicon wave plasma chemical vapor deposition technique . Raman scattering , infrared absorption and optical absorption measurements were used to analyze the microstructure , hydrogen bonding configurations and energy band structures of the deposited films .

本文用改装的等离子体化学气相沉积系统，采用中频等离子体气相沉积技术沉积了类金刚石碳（DLC）膜。

Diamond like carbon ( DLC ) films were prepared by middle frequency plasma vapor deposition method from different hydrocarbon source gases at varying voltages using the plasma chemical vapor deposition system .

综述了微波等离子体化学气相沉积（MPCVD）法制备金刚石膜技术，表明MPCVD是高速、大面积、高质量制备金刚石膜的首选方法。

An overview on using microwave plasma chemical vapor deposition ( MPCVD ) for the growth of high quality diamond films was given .

为提高微波等离子体化学气相沉积（MP－CVD）金刚石膜的面积和沉积速率，我们成功研制了5kW水冷不锈钢反应腔式MP－CVD装置。

KW microwave plasma chemical vapor deposition ( MP-CVD ) of diamond film setup is developed successfully with a water-cooled stainless steel reaction chamber for large film square and higher deposition rate .

采用螺旋波等离子体化学气相沉积（HWPCVD）技术，以SiH4作为源反应气体在Si（100）和玻璃衬底上制备了纳米Si薄膜。

Nanocrystalline Si films were deposited on Si ( 100 ) and glass substrate by helicon wave plasma chemical vapor deposition ( HWPCVD ) technique with SiH_4 as reaction gases .