过剩载流子

高温退火时NTDFZSi中产生的过剩载流子

The Generation of Excess Carriers in NTDFZSi at High Temperature Annealing Process

纳米β-SiC薄膜过剩载流子衰减特性分析

Excess Carriers Decay Behavior of Nanocrystalline β - SiC Thin Film

在IGBT关断过程中，pMOSFET将被开启，作为阳极短路结构起作用，从而使漂移区的过剩载流子迅速消失，IGBT快速关断。

During the turning-off of the IGBT , the p-MOSFET is turned on , which provides a channel for the excessive carriers to flow out of the drift region and prevents the carriers from being injected into the drift region .

提出在低电压（小于07V）下，衬底电极的作用可近似等效成栅，然后依据电荷增量（非平衡过剩载流子）的方法，推导出该结构的IV特性方程。

It is demonstrated that the substrate electrode can be regarded as a gate under the condition of low voltage supply ( < 0.7V ) . The equation of its I-V characteristics is then deduced according to the method of charge increment .

而且由于电场受到电阻场板的影响，使得过剩载流子能沿着一个更宽的通道流过漂移区，几乎消去了普通SOILIGBT由于衬偏造成的关断的第二阶段。

At the same time , the electric field affected by the RFP makes the excessive carriers flow through a wider region , which almost eliminates the second phase of the turning-off of the SOI-LIGBT caused by the substrate bias .

该模型在Wirth-Rogers光电流模型的基础上，增加考虑了高注入对过剩载流子寿命的影响以及衬底（准中性区）电场的效应，这些效应对于高阻材料是不容忽视的。

On the basis of Wirth-Rogers photocurrent models , the enhanced models include two additional effects as high injection effects on excess minority carrier lifetime and electric fields in the substrate ( quasi-neutral regions ) . These effects are most pronounced in high resistivity material .