反向击穿电压

但就制备高反向击穿电压的微波PIN二极管而言，这些工艺已不能满足要求。

But as concerning microwave PIN diode of high breakdown voltage , the craft can 't already meet the demands .

通过利用突变结PIN理想结构电场分布模型，分析了该结构发光二极管（LED）反向击穿电压与非故意掺杂有源区厚度的线性相关性。

The linear relation between the reverse breakdown voltage and un-doping active region ′ s thickness of PIN light emitting diode ( LED ) was analyzed by using the ideal PIN structure ′ s electric field distribution model .

结果表明键合工艺制备PIN二极管不仅制造成本低，工艺简单，而且界面缺陷少，反向击穿电压高。

The results show that bonding PIN diodes are not only low fabrication cost , simple technology , but also few defects and high breakdown voltages .

得到较为理想的反向击穿电压VBR，正向压降VF，反向恢复时间trr三参数之间的折衷。器件性能优良，可靠性高，样品通过150℃／168小时的高温反偏实验。

The excellent selections of breakdown voltage , forward voltage and reverse recovery time were obtained and the reliability of the device was pretty good .

源漏击穿电压和栅反向击穿电压分别为4V和7.5V。

Drain to source breakdown voltage and Schottky breakdown voltage are 4 V and 7.5 V , respectively .

首次提出了一种新型复合集电区结构，较好地解决了SHBT（单异质结双极晶体管）反向击穿电压低，DHBT电子堆积且与PIN探测器（PIN-PD）无法外延共享的问题。

A novel composite collector layer structure is presented for the first time , which better solves the poor breakdown voltage of SHBT ( single heterojunction bipolar transistor ) and the electron blocking efforts of traditional DHBT .

微条粒子探测器的反向击穿电压最高达240V，反向漏电流密度最低为0.025μA/mm2。

Their highest reverse breakdown voltage is 240 V , and the lowest reverse leakage current density is 0.025 μ A / mm 2.They have high illumination-sensitivity .

同时测试分析了该器件的IV特性：在室温下，正向开启电压为0.8V，反向击穿电压大于200V，反向漏电流小于10-10A；

The I V characteristics have also been measured . At room temperature , the forward turn on voltage is 0.8 V , the reverse breakdown voltage is higher than 200 V , and the leakage current is smaller than 10 - 10 A.

电子辐照对半导体器件反向击穿电压的影响

Influence of electron irradiation on backward breakdown voltage of semiconductor devices

化学腐蚀形成台面提高反向击穿电压；

Using chemical mesa etching to increase the breakdown voltage .

反向击穿电压可能和作用区的宽度有关。

The reverse breakdown voltage may be related to the width of the active region .

反向击穿电压取决于晶态衬底的电阻率。

The reverse breakdown voltage is dependent on resistivity of the cry - stalline substrate .

介绍了用于节能灯照明电路的高耐压功率晶体管的反向击穿电压、饱和压降和开关时间等参数的设计要求。

In this pager , the characteristics of high voltage switching power transistor used in electronics ballast , such as breakdown voltage , saturation voltage , and switching time are introduced .

当反向偏置形成时，半导体的连接点会有反向击穿电压。

Semiconductor junctions have a " reverse breakdown voltage " at which a reverse-biased junction begins to conduct .