异质结
- 网络heterojunction;hbt;hetero-junction;HIT;sige hbt
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热丝化学气相沉积n型nc-Si:H薄膜及nc-Si:H/c-Si异质结太阳电池
Study of n-type nc-si : h films and heterojunction solar cells by HWCVD
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Cu2S/CdS异质结工艺的发展
Advancement of processing for cu_2s / cds heterojunction
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C(70)/GaAs异质结的电学性质
Electrical Properties of Solid C _ ( 70 ) / GaAs Heterojunctions
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固体C(60)/Si异质结的电学表征&整流特性、能带模型与温偏效应
Electrical characterization of solid c60 / si heterojunctions rectifying properties , energy-band models , and bias-temperature effect
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n-ZnO/p-Si异质结UV增强型光电探测器的研究
Study on n-ZnO / p-Si Heterojunction UV Enhanced Photoelectric Detectors
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Si/Ge应变层异质结价带偏移的剪裁与设计
The Tailoring of Valence-Band Offsets at Strained Si / Ge Interfaces
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对称性对2D光子晶体异质结导波模的影响
The influence of photonic crystal heterostructures ' symmetric on guide modes
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ZnO纳米棒/有机材料异质结电致发光特性的研究
The Electroluminescence of ZnO Nanorod / organic Material Heterostructure Devices
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Ge、Si的形变势及其应变层异质结的带阶
Deformation Potentials and Band Offset of Ge , Si Strained layer Heterojunction
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纳米Cu2O/TiO2异质结薄膜电极的制备和表征
Preparation and Characterization of Nanocrystalline Cu_2O / TiO_2 Heterojunction Film Electrode
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晶格失配对C/BN异质结价带偏移的影响
Effecfs of Lattice Mismatch on Valence-Band Offsets △ E_v in Heterojunction C / BN
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GaAs双异质结激光器和多模光学纤维的耦合
Coupling of double - heterojunction GaAs laser into multimode optical fibers
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ZnO基p/n异质结器件的物性研究
The Studies on the Properties of the ZnO Based p / n Heterojunction Devices
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P型衬底a-Si:H/c-Si异质结太阳能电池具有重要的科学意义和应用价值。
It is of great scientific importance and practical value for investigation of a-Si : H / c-Si heterojunction solar cells on p-type crystalline silicon .
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Ga(1-x)AlxAs/GaAs双异质结激光器的液相外延研究
Liquid-phase epitaxy study of ga_ ( 1-x ) al_x as / gaas double heterojunction lasers
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通过对样品的结构分析初步探讨了异质结的形成机理,并以罗丹明B(RB)的脱色降解为模型反应,考察了样品的光催化性能。
The catalytic properties of the sample were studied via rhodamine B degradation as the model reaction .
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In(0.25)Ga(0.75)As/GaAs应变异质结的离子沟道分析
Ion Channeling Analysis of In_ ( 0.25 ) Ga_ ( 0.75 ) As / GaAs Strained Heterojunction
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稳态大注入突变异质结Poisson方程理论
Poisson 's Equation Theory for the Abrupt Heterojunctions Under the Stable Large Injection Condition
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AlN/GaN异质结的价带偏移计算
The Valence - band Offsets of Heterojunction AlN / GaN
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硼离子掺杂类金刚石薄膜及C(B)/n-Si异质结光伏特性
Diamond-like carbon films doped with b ions and photovoltaic property of c ( b ) / n-si heterojunction
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集电区阶梯缓变InGaAsP层的具有超高f_(max)、f_T的双异质结双极晶体管
Ltra-High f_ ( max ) and f_TI_nP / InGaAs Double-Heterojunction Bipolar Transistors with Step-Graded InGaAsP Collector
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基于有机异质结的有机-无机复合单量子阱发光性质的研究将聚酰胺(PA)质地的纳滤膜组装成一种脱盐装置。在此装置上对C。
The Emission of Organic - Inorganic Single Quantum Well with Organic Heterojunction Inorganic salt in C.
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该方法计算量少,计算结果满足价带特性,适用于p型异质结器件的优化设计。
Its amount of computation is less and the computed results satisfy the valence band characteristic so that it is suitable for the optimum design of p-type heterostructure devices .
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光辅助超高真空CVD系统制备SiGe异质结双极晶体管研究
Study on Fabrication of SiGe / Si-HBT by Photo-assisted UHV-CVD
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用单能慢正电子束和X射线衍射方法研究了Al/n-GaSb金属半导体异质结在不同温度退火的情况下的演变。
Annealing study of the Al / GaSb system was performed by using a slow positron beam and the measurement of X-ray diffraction .
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新颖的Si(1-x)Gex/Si异质结内光电发射长波红外探测器和焦平面阵列的发展
Development of Novel Si_ ( 1-x ) Ge_x / Si Heterojunction Internal Photoemission Long-wave IRD and FPA
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GaAs基异质结材料MBE生长及应用
MBE Growth of GaAs-Based Heterojunction Materials and Their Application
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用卢瑟福背散射/沟道技术研究ZnO/Zn(0.9)Mg(0.1)O/ZnO异质结的弹性应变
Depth-dependent elastic strain in ZnO / Zn_ ( 0.9 ) Mg_ ( 0.1 ) O / ZnO heterostructure studied by Rutherford backscattering / channeling
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异质结双极晶体管(heterojunctionbipolartransistor简称HBT)是异质结电子器件重要的一种。
Heterojunction Bipolar Transistor ( HBT ) is one of important heterojunction electronics devices .
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AIN、GaN立方晶体的静态性质和AIN/GaN异质结的价带偏移
The Static Properties of AlN and GaN , and the Valence-band offsets of AlN / GaN Heterojunction