准费米能级

文中还提出了准费米能级不连续性、载流子有效发射速度等与传统观念不同的新概念。

In addition , some different concepts , for example , " the quasi-Fermi level discontinuity " and " effective emission velocity of the carriers " are proposed .

这时电子和空穴各自分布在能带底，形成准费米狄拉克分布。这种热平衡费米分布可以用两个参数来描述，准费米能级μ和载流子温度Tc，开始时载流子温度高于晶格温度Tc>Tl。

The electron and hole system are described by a Fermi-Dirac distribution with two parameters : the quasi-Fermi level μ and the carrier temperature Tc which is initially higher than the lattice temperature Tc > TL.

扩散极限下n型半导体的晶界附近的准费米能级

Diffusion - limited quasi-Fermi level near a grain boundary of n - type polycrystalline semiconductors

利用I-V特性确定Schottky势垒中的准费米能级

Determination of Quasi - Fermi Level within Schottky Barrier from its I-V Characteristics