带隙
- 名band gap
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ZnO光子晶体的制备及其光子带隙特性研究
Growth and Photonic Band Gap Property of ZnO Photonic Crystals
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而共掺杂Ga和N时,其带隙变化明显。
However , the band gap is changed obviously with the concentration changing of the co-doped Ga / N.
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一种基于H分形光子带隙结构的小型微带天线
A miniaturized patch antenna using H-fractal photonic bandgap structure
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根据传输矩阵法利用C语言编程,计算了一维光子晶体的带隙结构及传输特性。
According to the transfer matrix method using C language programming , calculating the one-dimensional photonic crystal band structure and transmission characteristics .
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阐述了一种采用了一阶温度补偿技术设计的CMOS带隙基准电压源电路。
A CMOS band-gap reference circuit with first-order temperature compensation is presented .
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基于电磁带隙结构的PCB电源接地层设计
A Design of Power Bus Structures in PCBs Using EBG Structure
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文章介绍了两种CMOS带隙基准电路。
Two types of CMOS bandgap reference circuits are presented in this paper .
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讨论了带隙宽度ΔΩ随填充物填充分数f的变化规律。
The variation of gap width ΔΩ in liquid systems with the filling fraction / was discussed .
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CMOS亚阈型带隙电压基准的分析与设计
Sub-threshold Operation CMOS Bandgap Voltage Reference Design
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带隙可调的Zn(1-x)CdxO合金半导体薄膜的研究
Investigations on Zn_ ( 1-x ) Cd_xO Alloy Semiconductor Films with Tunable Band-gaps
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二维钢管阵列声子晶体带隙结构的研究薄膜晶体管,有源矩阵lcd
Search of Phononic Crystal Band-Gap about the Array of 2D Steel Tube TFT thin film transistor
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两种新型CMOS带隙基准电路
Two CMOS Bandgap Reference Circuits
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W掺杂量对非晶态TiO2:W薄膜光学带隙的影响
Effects of W Dope on the Optical Band Gap of Amorphous TiO_2 : W Thin Films
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提出了一种新的基于光子带隙结构的K波段谐振式带通滤波器,给出了近似设计公式,并在半导体衬底上,采用微电子的工艺实现了这种结构。
A new resonant bandpass filter based on the PBG structure is presented . A semiconductor based structure is realized using microelectronics technology .
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ZnO是新一代宽禁带、直接带隙的多功能Ⅱ-Ⅵ族半导体材料。
ZnO is a new generational multifunctional II - VI compound semiconductor with a wide and direct band gap .
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为满足低电源电压设备对精密电压基准的需求,文章设计了一款低压CMOS带隙基准电路。
To meet the demand of the low voltage equipment , a low-voltage CMOS bandgap circuit is designed .
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失配应力引起的GaxIn(1-x)P外延层能带隙的移动
The effect of mismatch strain on energy band-gap in ga_xin_ ( 1-x ) p epitaxial layers on ( 100 ) GaAs substrates
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池厚对SiO2胶体光子带隙的影响
Photonic Band Gap in Thickness Dependent SiO_2 Colloidal Crystals
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但由于SiC是一种间接带隙半导体材料,其在光学方面上的应用受到了很大限制。
But as we know , SiC is an indirect band gap material , which limits the applications on optic aspects .
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在探测器设计方面,由于硅资源丰富,以及硅基探测器能够很好地与硅IC电路兼容,但因为硅是间接带隙材料,使得硅基探测器在性能方面存在很大的缺陷。
It is a luciferous foreground for silicon photodetector because of silicon material abundant resource and being compatible primely with integrate circuit .
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GaAs/GaAlAs双异质结光波导开关内带隙的注入载流子感生变化
Injected Carrier-induced Band-Gap Change in GaAs / GaAlAs Double Heterostructure Waveguide Optical Switch
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一种使用一维电磁带隙结构的高性能Ka频段四次谐波混频器
Ka-band fourth harmonic mixer with 1-D EBG structure
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同时,带隙基准电压源电路的结构简单,可靠性较高,可以用标准CMOS工艺实现,适宜于大规模生产,目前已成为CMOS集成电路当中最流行的一种基准电压产生器。
At present , the bandgap reference voltage has been the most popular reference voltage generator in CMOS integrated circuits .
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Mn掺杂导致了ZnO晶格常数和光学带隙的增加,并且诱导了微结构的无序性。
Mn incorporation results in the increase of the lattice constant and band-gap energy of ZnO , and also induces microstructural disorder .
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采用偏光电反射(ER)谱法测定室温下N~+P结Si间接光学带隙。
The electroreflectance ( ER ) method was used to measure the indirect optical energy gaps in silicon N + - P junction .
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文章介绍了一种利用Bipolar管的电流增益随温度呈指数型变化的规律,对带隙基准进行温度补偿的指数型温度补偿技术。
In this paper , a bandgap Reference circuit with the exponential curvature temperature compensation technology has been introduced .
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到目前为止空芯光纤大体上可分为两种结构,分别是Bragg光纤和光子带隙型光纤,它们都是利用光子带隙的机理来束缚光在空气芯中传输。
So far , there are two classes of hollow-core fibers and they are Bragg fiber and photonic bandgap fiber .
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获得的SiO2光子晶体具有长程有序结构,并在近红外区具有显著的光子频率带隙。
It was found that the samples had long-ordered structures and photonic band gaps in the near-infrared region .
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金属离子掺杂明显增强TiO2纳米晶簇的光吸收。TiO2带隙发生红移。
The optical absorbance of TiO-2 after doping metal ions increased considerably and a red shift of the band-gap took place .
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因此本文主要工作是设计一个低压低功耗的CMOS带隙基准电压源。
Hence , the work of this thesis is the design of a low voltage low power CMOS bandgap reference voltage source .