带隙

dài xì
  • band gap
带隙带隙
  1. ZnO光子晶体的制备及其光子带隙特性研究

    Growth and Photonic Band Gap Property of ZnO Photonic Crystals

  2. 而共掺杂Ga和N时,其带隙变化明显。

    However , the band gap is changed obviously with the concentration changing of the co-doped Ga / N.

  3. 一种基于H分形光子带隙结构的小型微带天线

    A miniaturized patch antenna using H-fractal photonic bandgap structure

  4. 根据传输矩阵法利用C语言编程,计算了一维光子晶体的带隙结构及传输特性。

    According to the transfer matrix method using C language programming , calculating the one-dimensional photonic crystal band structure and transmission characteristics .

  5. 阐述了一种采用了一阶温度补偿技术设计的CMOS带隙基准电压源电路。

    A CMOS band-gap reference circuit with first-order temperature compensation is presented .

  6. 基于电磁带隙结构的PCB电源接地层设计

    A Design of Power Bus Structures in PCBs Using EBG Structure

  7. 文章介绍了两种CMOS带隙基准电路。

    Two types of CMOS bandgap reference circuits are presented in this paper .

  8. 讨论了带隙宽度ΔΩ随填充物填充分数f的变化规律。

    The variation of gap width ΔΩ in liquid systems with the filling fraction / was discussed .

  9. CMOS亚阈型带隙电压基准的分析与设计

    Sub-threshold Operation CMOS Bandgap Voltage Reference Design

  10. 带隙可调的Zn(1-x)CdxO合金半导体薄膜的研究

    Investigations on Zn_ ( 1-x ) Cd_xO Alloy Semiconductor Films with Tunable Band-gaps

  11. 二维钢管阵列声子晶体带隙结构的研究薄膜晶体管,有源矩阵lcd

    Search of Phononic Crystal Band-Gap about the Array of 2D Steel Tube TFT thin film transistor

  12. 两种新型CMOS带隙基准电路

    Two CMOS Bandgap Reference Circuits

  13. W掺杂量对非晶态TiO2:W薄膜光学带隙的影响

    Effects of W Dope on the Optical Band Gap of Amorphous TiO_2 : W Thin Films

  14. 提出了一种新的基于光子带隙结构的K波段谐振式带通滤波器,给出了近似设计公式,并在半导体衬底上,采用微电子的工艺实现了这种结构。

    A new resonant bandpass filter based on the PBG structure is presented . A semiconductor based structure is realized using microelectronics technology .

  15. ZnO是新一代宽禁带、直接带隙的多功能Ⅱ-Ⅵ族半导体材料。

    ZnO is a new generational multifunctional II - VI compound semiconductor with a wide and direct band gap .

  16. 为满足低电源电压设备对精密电压基准的需求,文章设计了一款低压CMOS带隙基准电路。

    To meet the demand of the low voltage equipment , a low-voltage CMOS bandgap circuit is designed .

  17. 失配应力引起的GaxIn(1-x)P外延层能带隙的移动

    The effect of mismatch strain on energy band-gap in ga_xin_ ( 1-x ) p epitaxial layers on ( 100 ) GaAs substrates

  18. 池厚对SiO2胶体光子带隙的影响

    Photonic Band Gap in Thickness Dependent SiO_2 Colloidal Crystals

  19. 但由于SiC是一种间接带隙半导体材料,其在光学方面上的应用受到了很大限制。

    But as we know , SiC is an indirect band gap material , which limits the applications on optic aspects .

  20. 在探测器设计方面,由于硅资源丰富,以及硅基探测器能够很好地与硅IC电路兼容,但因为硅是间接带隙材料,使得硅基探测器在性能方面存在很大的缺陷。

    It is a luciferous foreground for silicon photodetector because of silicon material abundant resource and being compatible primely with integrate circuit .

  21. GaAs/GaAlAs双异质结光波导开关内带隙的注入载流子感生变化

    Injected Carrier-induced Band-Gap Change in GaAs / GaAlAs Double Heterostructure Waveguide Optical Switch

  22. 一种使用一维电磁带隙结构的高性能Ka频段四次谐波混频器

    Ka-band fourth harmonic mixer with 1-D EBG structure

  23. 同时,带隙基准电压源电路的结构简单,可靠性较高,可以用标准CMOS工艺实现,适宜于大规模生产,目前已成为CMOS集成电路当中最流行的一种基准电压产生器。

    At present , the bandgap reference voltage has been the most popular reference voltage generator in CMOS integrated circuits .

  24. Mn掺杂导致了ZnO晶格常数和光学带隙的增加,并且诱导了微结构的无序性。

    Mn incorporation results in the increase of the lattice constant and band-gap energy of ZnO , and also induces microstructural disorder .

  25. 采用偏光电反射(ER)谱法测定室温下N~+P结Si间接光学带隙。

    The electroreflectance ( ER ) method was used to measure the indirect optical energy gaps in silicon N + - P junction .

  26. 文章介绍了一种利用Bipolar管的电流增益随温度呈指数型变化的规律,对带隙基准进行温度补偿的指数型温度补偿技术。

    In this paper , a bandgap Reference circuit with the exponential curvature temperature compensation technology has been introduced .

  27. 到目前为止空芯光纤大体上可分为两种结构,分别是Bragg光纤和光子带隙型光纤,它们都是利用光子带隙的机理来束缚光在空气芯中传输。

    So far , there are two classes of hollow-core fibers and they are Bragg fiber and photonic bandgap fiber .

  28. 获得的SiO2光子晶体具有长程有序结构,并在近红外区具有显著的光子频率带隙。

    It was found that the samples had long-ordered structures and photonic band gaps in the near-infrared region .

  29. 金属离子掺杂明显增强TiO2纳米晶簇的光吸收。TiO2带隙发生红移。

    The optical absorbance of TiO-2 after doping metal ions increased considerably and a red shift of the band-gap took place .

  30. 因此本文主要工作是设计一个低压低功耗的CMOS带隙基准电压源。

    Hence , the work of this thesis is the design of a low voltage low power CMOS bandgap reference voltage source .