空表面态
空表面态-
空表面态引起n型样品表面能带发生1.36eV弯曲。
A 1.36 eV band bending in surface region is induced by these empty surface states .
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发现与P原子悬挂键有关的本征满表面态在Г点位于价带顶下0.6eV处，而缺陷引入的空表面态位于价带顶上1.1eV处（Г点）。
It is found that the intrinsic occupied surface states related to P atom dangling bonds are located at 0.6 eV below the valence band maximum , while the defect induced empty surface states are located at 1.1 eV above the valence band maximum (Γ point ) .